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Imperfections in Solids and Diffusion

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Title: Imperfections in Solids and Diffusion


1
Imperfections in Solids and Diffusion
References used in preparation Callister, 2000
and Smith, 2006
2
OUTLINE OF THE LECTURE
  • Imperfections
  • Point
  • Linear
  • Interfacial
  • Microscopic Examination of Dislocations
  • Diffusion
  • Diffusion mechanisms
  • Steady-state diffusion
  • Non-steady state diffusion
  • Factor affecting diffusion

3
  • A crystalline defect is lattice irregularity and
    its classification is made based on the geometry
    or dimensionality of the defect. Impurities in
    solids may be considered as defects for pure
    materials.
  • The properties of the materials may change by the
    presence of imperfections.
  • For example Pure silver (Ag) softer than
    alloyed Ag (sterling silver 92.5 Ag and 7.5
    Cu), which is harder and stronger. In this
    example Cu atoms changes the perfection of the Ag
    metal.
  • There are small and localized regions of
    impurities in semiconducting materials used in
    integrated circuit microelectronic devices in
    computers, calculators and home appliances.
  • Imperfections may exist as a result of
    solidification of the material. During
    solidification, the material may cease to
    replicate the unit cells, for instance, formation
    of grain boundaries in metallic materials.
  • On the other hand imperfections can be introduced
    to the material on purpose to change the property
    (like in Ag, semiconducting materials.)

4
Stages in Solidification
5
Types of Imperfections in Materials
  • Point Defects
  • Vacancies and self-interstitials
  • Impurities in solids
  • 2. Linear Defects
  • Dislocations
  • 3. Interfacial Defects
  • Grain boundaries

6
Point Defects
  • Vacancies and Self-Interstitials
  • Vacancy is observed when an atom is missing. This
    type of defect is commonly observed. The
    existence of vacancies is closely related with
    the continuous increase in entropy (randomness)
    since it decreases organization in a crystalline
    structure (2nd law of thermodynamics).

Self-interstitial
Vacancy
7
Energy required for the formation of vacancy
Equilibrium number of vacancies for a given
quantity
Total number of atomic sites
Absolute temperature (K)
kBoltzmanns constant1.38x10-23 J/atom-K or
8.62x10-5 eV/atom-K. Use the appropriate constant
depending on the unit of Qv.
Based on this equation, it is clear that as T
increases the number of vacancies increases
exponentially.
For most of the metals just below melting point,
the fraction of vacancies (N/Nv) is on the order
of 10-4. This means one lattice out of 10,000 is
empty.
8
  • Self-Interstitials- these are the atoms crowding
    into interstitial sites (void spaces, which are
    not occupied under ordinary circumstances). In
    metals, this type of defect causes large
    distortions in the surrounding lattice because
    the interstitial atoms usually larger than the
    void space.

Example Nv? Given Cu Qv0.9 eV/atom, atomic
weight 63.5 g/mol, ?8.4 g/mol Use the
equations
9
  • Point defects in Ceramics vacancies and
    interstitials are possible. These are illustrated
    below

Cation interstitial
Cation vacancy
Anion vacancy
10
  • In ceramics, conditions of electroneutrality must
    be maintained even in the defect structures. As a
    result, defects in ceramics do not occur alone.
    For example, one type of defect has a cation
    vacancy and cation interstitial pair, which is
    called Frenkel defect. Another type involves a
    pair vacancies of a cation and anion, which is
    called Schottky defect.

Schottky
Frenkel
11
  • The ratio of cation to anion is not affected from
    the defect type, and therefore these are called
    stoichiometric ceramics. But there may be
    nonstoichiometric ceramics composed of ions with
    more than one states.

For every two Fe3 formation, there is a single
Fe2 vacancy. This maintains the the
electroneutrality, but not the stoichiometry.
Therefore the chemical formula of The FeO is
usually shown as Fe1-xO (x is a small fraction).
12
  • Impurities in solids Impurity or foreign atoms
    are always present, that is, it is difficult to
    find a pure material. Even if the purity is
    99.9999, then 1022 to 1023 impurity atoms will
    be present in 1 m3 of the metal.
  • Alloys are materials in which impurity is added
    intentionaly to alter the characteristics (
    mechanical strength, corrosion resistance) of the
    materials composing them.
  • The addition of impurity atoms to a metal forms a
    solid solution.
  • Solute is the element or compound present in
    minor concentration.
  • Solvent is the host element with high
    concentration.
  • Solid solutions are compositionally homogeneous,
    and the solute atoms are randomly dispersed
    within the solid.
  • Impurity point defects can be found as,
  • 1) Substitutional 2) Interstitial

Substitutional
Interstitial
13
  • Substitutional solutions Here are some important
    features for this type of solid solution
    (Hume-Rothery rules),
  • Atomic size difference should be less than 15
    b/w the two atoms. Otherwise the solute atoms
    will create substantial lattice distortions and a
    new phase will form.
  • Crystal structure should be the same.
  • Electronegativities should be similar to prevent
    the ionic bonding.
  • Other factors being equal, a metal has a higher
    tendency to dissolve another metal of higher
    valency.
  • For example Cu-Ni solid solution. The type is
    substitutional. WHY?
  • Because
  • Radii for Cu and Ni are 0.128 and 0.125 nm
    respectively.
  • They both have FCC structure.
  • Their electronegativities are 1.9 and 1.8 for Cu
    and Ni respectively.
  • The most common valence is 1 for Cu and 2 for
    Ni.

14
  • Interstitial solutions Impurity atoms fill the
    voids or interstices among the host atoms. For
    metals with a high APF, the interstitial
    positions are small in size and therefore the
    diameter of the impurity atoms should be smaller.
    In general, the concentration of impurity atoms
    is low (lt10 ). The formation of interstitial
    solutions introduce lattice strains on the
    adjacent host atoms. For example C forms an
    interstitial solid solution when it is added to
    Fe.
  • 2 is the maximum solubility of C (r0.071 nm)
    in Fe (r0.124 nm).
  • Impurities in Ceramics Substantial and
    interstitial solutions are possible.

Substitional cation
Interstitial
Ionic sizes and charges should be similar for
high solubility.
Substitional anion
15
  • There are two ways of specifying the composition
    of solid solutions
  • Weight percent and atom percent.
  • Weight percent

m1 and m2 are the masses of the solute and
solvent.
Atom percent
nm1 is the number of moles of an element (or
number of atoms). m1 is the mass and A1 is the
atomic weight. C1 is the atom percentage.
Conversions from weight percent to atom percent
16
  • To convert concentration from weight percent to
    mass/volume

For density in units g/cm3, these expressions
yield C1 and C2 in kg/m3.
To calculate the density and atomic weight of a
binary alloy
Note that the equations on this page are deriven
by assuming the total alloy volume is exactly
equal to the sum of the volumes of the
individual elements. This assumption may be true
for dilute solutions, but brings in some error
to the calculations.
17
Linear Defects
  • It is a group of point defects forming a linear
    one dimensional defect in the structure of the
    material. Dislocation is the most commonly
    observed type of linear defect.

1. edge dislocation
Extra portion of a plane of atoms terminating
within the lattice structure causing localized
lattice distortion. The magnitude and direction
of the distortion is expressed in terms of a
Burgers vector, b, which is perpendicular to edge
dislocation line.
18
  • 2) screw dislocation
  • It may be thought of as being formed by a shear
    stress that is applied to produce this type of
    dislocation.

The upper part is shifted one atomic distance to
the right relative to the bottom portion.
dislocation line
Dislocation line is linear.
Burgers vector is parallel to dislocation line.
19
  • Mixed dislocations very common

Edge dislocation
Screw dislocation
20
  • All crystalline materials contain dislocations,
    which may have introduced during solidification,
    plastic deformation, and as a result of thermal
    stresses that a rapidly cooled material
    experiences.
  • Interfacial Defects
  • Interfacial defects are boundaries that have two
    dimensions and separate regions of different
    crystal structures or crystallographic
    orientations.
  • For example
  • 1)External surface is the boundary of material
    at which the structure terminates. Atoms at the
    surface have higher energy state than the atoms
    at the inner parts of the structure. This energy
    is called surface energy (J/m2 or erg/cm2). To
    minimize this energy, materials minimizes the
    surface area.
  • 2)Grain boundary Crystalline solids composed of
    a collection of many small crystals or grains are
    called polycrystalline. The growth of grains
    happens during solidification. Grain boundary is
    the line separating two small grains or crystals
    having different crystallographic orientations.

21
  • Solidification

22
  • Grain boundary is a type of interfacial defect
    and usually is several atom distances wide.
  • Various degrees of crystallographic misalignment
    between adjacent grains are possible.

The atoms are bonded less regularly along the
grain boundary and there is an interfacial or
grain boundary energy similar to the surface
energy. The magnitude of the energy depends on
the degree of misorientation. It is higher for
higher angle grain boundary. Grains boundaries
are important parts of the structure since they
are reactive chemically and impurity atoms
prefer grain boundaries. Fine grained materials
have higher grain boundary energy. Discuss WHY?

23
  • Twin Boundary is a special type of grain
    boundary across which there is a mirror lattice
    symmetry.

observed due to atomic displacements produced
as a result of shear force application and during
annealing heat treatments following deformation.
Twinning is observed on a specific plane and
direction. Annealing twin is commonly observed in
materials with FCC structures. Mechanical twins
are observed in BCC and HCP metals.
Other interfacial defects are stacking faults
(FCC), phase boundaries, ferromagnetic domain
walls.
Cracks, pores, foreign inclusions are examples
for bulk or volume defects. Atomic vibrations
can be thought as imperfections at any time fixed.
24
  • Examination of dislocations can be performed
    using microscopic techniques.

relatively large grains
microscopic dislocations
Microscopic techniques involves a photographic
equipment in conjunction with the microscope.
25
  • Optical Microscopy there is a pretreatment
    necessary for the sample as grounding and
    polishing the surface to a smooth and mirrorlike
    finish. The microstructure is revealed by using a
    chemical reagent (etching). The chemical
    reactivity of the grains depends on
    crsytallographic orientation.

26
  • Grain boundaries dissolve more than grains and
    using a chemical reagent can make the grooves
    deeper so that they can be examined using a light
    microscope.

The upper limit of magnification is 2000
diameter.
27
  • Electron Microscopy
  • Higher magnifications than optical is possible.
  • Beams of electrons are used instead of light
    radiation.
  • Transmission electron microscopy (TEM) a
    specimen is prepared as a thin foil to ensure the
    transmission through the specimen. Magnifications
    up to 1,000,000x is possible.
  • Scanning electron microscopy (SEM) Surface
    features of the specimen are examined. Surface
    may or may not be polished or etched, but it must
    be electrically conductive. If the material is
    nonconductive, then it is coated by a conductive
    material.
  • Scanning probe microscopy (SPM) This technique
    creates a topographical map of the surface on an
    atomic scale.
  • -Examination in nanoscale (109X) is possible.
  • -Resolution is higher.
  • -Three dimensional images can be produced.
  • -They may operate in a variety of environments.

28
  • Grain Size Distribution
  • Grain size may be estimated using an intercept
    method.
  • On a photomicrograph, draw straight lines all the
    same in length and count the grains intersecting
    each line, and then divide the length of the line
    by an average number of grains intersected. The
    average grain diameter can then be calculated by
    using the magnification of the photomicrograph.
  • Another technique is ASTM technique Use a 100x
    magnified photograph of the material. ASTM has
    prepared standard comparison charts corresponding
    to different grain sizes numbered from 1 to 10
    (grain size number, n). The larger the number,
    the smaller the grains. Determine the grain size
    number by comparison and use the equation below
    to find out the number of grains per square inch
    (N)

29
  • DIFFUSION
  • Heat treatment of the materials causes atomic
    diffusion, which is usually desired to improve
    the properties of the materials. For example the
    steel gear, which case hardened.

Hardness of the material and resistance to
failure have been improved by diffusing excess C
or N into the outer surface layer.
30
  • Diffusion is material transport by atomic motion.
    Diffusion can be explained using a diffusion
    couple example

after heating
before heating
This process is also called interdiffusion or
impurity diffusion.
31
  • Diffusion Mechanisms
  • Diffusion is a stepwise migration of the atoms
    fro lattice site to another lattice site. For
    this to happen
  • there must be an empty adjacent site
  • atom that is moving should have enough energy to
    break bonds with the neighboring atoms and cause
    some distortion. The energy is vibrational in
    nature.
  • Vacancy diffusion the interchange of an atom
    from a normal lattice position to an adjacent
    vacant lattice resulting in a motion of vacancies
    in opposite direction.

32
  • Interstitial Diffusion Atoms move from an
    interstitial position to another one closeby.
    Migrating atoms should be small in size such as
    N, C, H and O. This type of diffusion has a
    faster rate than vacancy diffusion.

33
  • Steady State diffusion Diffusion is a function
    of time when it is necessary to find out how fast
    the diffusion is. This rate is explained by
    diffusion flux (J)

In differential form
mass
time
crosssectional area
If the diffusion flux is the same regardless of
time, then a steady state condition exists.
34
  • The steady state diffusion in a single direction
    is simple

Ficks first law
D is diffusion coefficient (m2/sec). The negative
sign indicates that the direction of diffusion is
down the concentration gradient. Concentration
gradient is the driving force in diffusion
reactions. One example for steady state diffusion
is the purification of hydrogen gas using
palladium sheet.
35
  • Nonsteady state diffusion The diffusion flux and
    concentration gradient at a selected point vary
    with time causing a net accumulation or
    depletion.

For nonsteady state diffusion Ficks first law is
not valid. Therefore, we use partial differential
equation as
Ficks second law
Depending on the selected boundary conditions
there may be different solutions for
this equation. For example semi-finite solid
in which the surface concentration is held
constant. Assume a) before diffusion, diffusing
solute concentration is uniform, Co. b) the value
of x is zero at the surface and increases with
distance into the solid. c) the time is zero at
the instant before the diffusion begins.
36
Gaussian error function
concentration at the depth x after time t
37
  • Factors affecting diffusion
  • 1) Diffusing species- different materials have
    different diffusion coefficient, which is also
    the indication of the diffusion rate.

38
  • 2) Temperature
  • Temperature dependence can be expressed as
    follows

39
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