The applications and uses of LPCVD silicon nitride deposition method for manufacturing silicon wafers

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The applications and uses of LPCVD silicon
nitride deposition method for manufacturing
silicon wafers
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• Thin films are deposited onto substrates for use
  as functional components of a device, like for
  creating an insulation or conduction layer. The
  layer can be applied for the etching process
  where it is usually removed after the process is
  over. Thin films of silicon nitride are used as
  these display dielectric properties.
•  
• Silicon nitride is a dielectric material used in
  the processing of semiconductors. The material
  can be used on a wide variety of substrates using
  LCPCVD (Low Pressure Chemical Vapor Deposition)
  and other techniques such as sputtering and
  evaporation. The process can be completed in a
  hot-wall or cold-walled quartz tube reactor.
  Hot-walled furnaces have high throughput and
  thermal uniformity, resulting in uniform films.
  However, deposition can occur on walls in hot
  furnaces, requiring more maintenance for
  cleaning. Cold wall reactors have lower
  maintenance as no film deposition occurs on the
  reactor walls.

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• In the process of LPCVD silicon nitride
  deposition, the tube is evacuated to low
  pressures. Once the tube is under vacuum, it is
  then heated up to deposition temperature at which
  the precursor gas decomposes. The gas is injected
  into the tube where it diffuses and reacts with
  the surface of the substrate, resulting in a
  solid material. Any excess gas is pumped out of
  the tube through an abatement system. LPCVD films
  are typically more uniform and lower in defects.

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• Use of polysilicon 
• Silicon is deposited using the LPCVD silicon
  nitride deposition method on the silicon wafers.
  Most LPCVD films are somewhat conformal and can
  offer protection for structures requiring
  electrical isolation. Polysilicon can be
  deposited on both doped and P- and N-doped
  silicon wafers. Polysilicon is used as wire
  traces for integrated circuits and MEM devices.
  Silicon nitride can be deposited in both
  stoichiometric form and low-stress form through
  the process of LPCVD silicon nitride deposition,
  depending upon the required material properties.
  Stoichiometric silicon nitride is used as an
  insulator while low-stress nitride is used for
  making membranes which are resistant to HF
  etching.

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• Silicon wafers with various types of depositions 
• At WaferPro, you can get the best quality silicon
  wafers for use in specific applications. The
  company uses LPCVD silicon nitride deposition
  method using state-of-the-art technology so that
  what you get is of the highest standards.
  WaferPro offers silicon wafers with
  stoichiometric LPCVD silicon nitride deposition
  or low-stress LPCVD nitride, as well as super
  low-stress LPCVD nitride. The company also offers
  high-quality PECVD nitride, low-stress PECVD
  nitride, and PECVD OxyNitride. Wafer diameters
  are available from 2 to 12 (300 mm), and
  nitride thickness is available from 100Å to
  20,000Å.

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• WaferPro is the leading supplier of silicon
  wafers and semiconductor materials to the
  electronics industry and research institutes. The
  company offers Prime and Test silicon wafers that
  adhere to SEMI standards in a variety of
  diameters. In addition to SEMI standard silicon
  wafers, WaferPro also offers Float Zone (FZ)
  wafers, Silicon on Insulator (SOI) wafers, and
  other semiconductor materials. Double-side
  polished, oxide MEMS wafers are also available.

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