Title: A 333MHz DRAM with Floating Body Cell (FBC)
1A 333MHz DRAM with Floating Body Cell (FBC)
- VLSI Systems I
- Fall 2007
- Hamid Abbasalizadeh
2Introduction to the Floating Body Cell (FBC) 1
- Berkeley Started the FBC and then Toshiba
continued. - Intel introduced more advanced one using (two
gates) front and back. - The idea is to eliminate the capacitor from
conventional DRAM therefore, it is more denser
faster and easier to make, but still slower than
SRAMs. - Floating Body (FB) part retains the charge based
on the thickness of the Bottom Oxide (BOX), and
the BG voltage difference. - FBC cells do not need to be refreshed every
cycle. They only need to be refilled with a few
holes for logic 1 that is way faster than
refreshing time of the conventional DRAMs.
1 http//www.theinquirer.net/default.aspx?articl
e36285
3Papers Objectives 2
- To show by Monte Carlo simulation that FBC DRAMs
read cycle speed can go up to 333MHz. - This improvement is done by introducing a
symmetrical sense amplifier with an improved
current mirror ratio. - Improvement of the sense amplifier means reducing
the tPREAMP.
FBC cell only need to be restored for logic 1,
and it only needs to be refilled with a few
holes lost by charge pumping phenomenon every
time its word line is activated.
4Speed Improvement of the Sense Amplifier by
Making Current Mirror Symmetrical 2
Conventional Sense Amplifier
Introduced Symmetrical Sense Amplifier
5Pre-amps Gain and Speed Speed Comparison
Between FBC DRAMs Conventional DRAMs 2
- Making ratio of M2/M1 larger than 1, in other
words, increasing the gain of the
pre-amplification reduces the tPREAMP , unless,
there is a process variation. - In case of process variation, increasing the gain
will make the pre-amp unstable. - Read cycle time (tRC) of the FBC DRAMs looks very
promising compare to conventional DRAMs - Also FBC (3) is denser than a conventional 165nm
DRAM
2 Hatsuda, K. Fujita, K. Ohsawa, T. A 333MHz
random cycle DRAM using the floating body cell
Custom Integrated Circuits Conference,
Proceedings of the IEEE, Sept. 2005