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A 333MHz DRAM with Floating Body Cell (FBC)

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Intel introduced more advanced one using (two gates) front and back. ... To show by Monte Carlo simulation that FBC DRAM's read cycle speed can go up to 333MHz. ... – PowerPoint PPT presentation

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Title: A 333MHz DRAM with Floating Body Cell (FBC)


1
A 333MHz DRAM with Floating Body Cell (FBC)
  • VLSI Systems I
  • Fall 2007
  • Hamid Abbasalizadeh

2
Introduction to the Floating Body Cell (FBC) 1
  • Berkeley Started the FBC and then Toshiba
    continued.
  • Intel introduced more advanced one using (two
    gates) front and back.
  • The idea is to eliminate the capacitor from
    conventional DRAM therefore, it is more denser
    faster and easier to make, but still slower than
    SRAMs.
  • Floating Body (FB) part retains the charge based
    on the thickness of the Bottom Oxide (BOX), and
    the BG voltage difference.
  • FBC cells do not need to be refreshed every
    cycle. They only need to be refilled with a few
    holes for logic 1 that is way faster than
    refreshing time of the conventional DRAMs.

1 http//www.theinquirer.net/default.aspx?articl
e36285
3
Papers Objectives 2
  • To show by Monte Carlo simulation that FBC DRAMs
    read cycle speed can go up to 333MHz.
  • This improvement is done by introducing a
    symmetrical sense amplifier with an improved
    current mirror ratio.
  • Improvement of the sense amplifier means reducing
    the tPREAMP.

FBC cell only need to be restored for logic 1,
and it only needs to be refilled with a few
holes lost by charge pumping phenomenon every
time its word line is activated.
4
Speed Improvement of the Sense Amplifier by
Making Current Mirror Symmetrical 2
Conventional Sense Amplifier
Introduced Symmetrical Sense Amplifier
5
Pre-amps Gain and Speed Speed Comparison
Between FBC DRAMs Conventional DRAMs 2
  • Making ratio of M2/M1 larger than 1, in other
    words, increasing the gain of the
    pre-amplification reduces the tPREAMP , unless,
    there is a process variation.
  • In case of process variation, increasing the gain
    will make the pre-amp unstable.
  • Read cycle time (tRC) of the FBC DRAMs looks very
    promising compare to conventional DRAMs
  • Also FBC (3) is denser than a conventional 165nm
    DRAM

2 Hatsuda, K. Fujita, K. Ohsawa, T. A 333MHz
random cycle DRAM using the floating body cell
Custom Integrated Circuits Conference,
Proceedings of the IEEE, Sept. 2005
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