3-6 September 2002

1
3-6 September 2002 Antwerp Hilton, Belgium
2
Outline

• Wednesday Sept 4th, 2002
• Introduction
• Exposure tools/Immersion lithography
• Materials
• Lasers
• Thursday Sept 5th, 2002
• Resists I
• Metrology
• Friday Sept 6th,2002
• Masks
• Resists II
• General / closure

3
Exposure tools andimmersion lithography
Session chairs G. Fueller, A. Suzuki, R. Garreis

• 0840 Nikon F2 Exposure Tool
• Soichi Owa, Naomasa Shiraishi, Issei Tanaka,
  Yasuhiro Ohmura, Kazuhiro Kido
• Nikon Corporation
•  
• 0900 Development of 157nm Exposure Tools
• Hideo Hata
• Canon Inc., Semiconductor Equipment Development
  Center
•  
• 0920 157nm Exposure Tool
• Hans Jasper1,Herman Boom1, Tammo Uitterdijk1,
  Theo Modderman1, Jan Mulkens1, Judon
  Stoeldraijer1, Martin Brunotte2, Birgit Mecking2,
  Nils Dieckmann2
• 1ASML Veldhoven, 2Carl Zeiss
•  
• 0940 Update on MSVII Lithographic System
• J. McClay, B. Tirri, H. Sewell, T. Fahey
• ASML Wilton

4
Exposure tools and immersion lithography
Session chairs G. Fueller, A. Suzuki, R. Garreis

• 1030 Drivers, Prospects and Challenges for
  Immersion Lithography (INVITED)
• Burn J. Lin
• TSMC
•  
• 1050 Immersion Lithography Optics for the 50nm
  Node
• M. Switkes, M. Rothschild
• MIT Lincoln Laboratory
•  
• 1110 157nm Objective Improvements, Wavefront
  Measurements and Modeling Predictions
• James Webb, Steve Mack, Tim Rich, Horst
  Schreiber
• Corning Tropel Corporation
•  
• 1130 High Numerical Aperture Lens for 157nm
  Lithography
• Toshifumi Suganaga1, Noriyoshi Kanda1, Jae-Hwan
  Kim1, Osamu Yamabe1, Kunio Watanabe1, Takamitsu
  Furukawa1, Seiro Miyoshi1, Toshiro Itani1,
  Julian Cashmore2, Malcolm Gower2
• 1Selete, 2Exitech Ltd.

5
Materials
Session chairs R. Sparrow, S. Kikugawa, E.
Moersen

• 1330 Calcium Fluoride Quality Improvement Will
  Enable High Volume F2 Lithography Tools
• G. Grabosch, K. Knapp, L. Parthier, E. Mörsen
• Schott Lithotec AG
• 1350 Progress in the Development of CaF2
  Materials for 157nm Lithography
• Applications
• Bill Rosch, Michael Genier
• Corning Inc.
• 1410 Crystal Growth of CaF2 Focus on Yield
  Enhancement
• N. Senguttuvan1, K. Sumiya1, K. Susa1, M. Ishii
  2
• 1Research Development Center, Hitachi Chemical
  Co., Ltd., 2 Shonan Institute of Technology
• 1430 CaF2 Ramp Challenges for 157nm Lithography
• Janice M. Golda
• Intel Corporation
• 1450 Index- and Birefringence-Dispersion
  Properties of CaF2, SrF2 and Ca1-xSrxF2 down to
  157nm
• John H. Burnett1, Zachary H. Levine1, Eric L.
  Shirley1, Robert Sparrow2
• 1National Institute of Standards and Technology,
  2Corning Inc.

6
Materials
Session chairs R. Sparrow, S. Kikugawa, E.
Moersen

• 1510 Modified Fused Silica Glass AQF for 157
  nm Lithography
• Y.Ikuta, T. Minematsu, H. Kojima, S. Kikugawa,
  Y. Sasuga
• Asahi Glass Co. Ltd.
• 1600 Refractory Oxide Contamination of Optical
  Surfaces at 157 nm
• T.M. Bloomstein, J.H.C. Sedlacek, S.T. Palmacci,
  D.E. Hardy, V. Liberman, M. Rothschild
• MIT Lincoln Laboratory
•  
• 1620 Long-Term Durability of Optical Coatings
• V. Liberman1, M. Rothschld1, N.N. Efremow1, S.T.
  Palmacci1, J.H.C. Sedlacek1, A. Grenville2
• 1MIT Lincoln Laboratory, 2Intel
  Corporation/International SEMATECH
•  
• 1640 Accelerated Damage to CaF2 and MgF2
  Surfaces
• V. Liberman1, M. Rothschld1, N.N. Efremow1, A.
  Grenville2
• 1MIT Lincoln Laboratory, 2Intel
  Corporation/International SEMATECH
•  

7
Lasers
Session chairs R. Sandstrom, H. Mizoguchi, R.
Paetzel

• 1700 High Power, High Repetition Rate F2-Laser
  for 157 nm Lithography
• S. Spratte1, F. Voss1, I. Bragin1, E. Bergmann1,
  N. Niemöller1, T. Nagy1, U. Rebhan1, K.
  Vogler1, I. Klaft1, R. Pätzel1, G. Govorkov2, G.
  Hua2
• 1Lambda Physik AG, 2Lambda Physik Inc.
•  
• 1720 F2 MOPA. Some Aspects of Spectral Purity
• German Rylov
• Cymer Inc.
•  
• 1740 Spectral Dynamics Analysis of
  Ultra-Line-Narrowed F2 Laser
• Ryoichi Nohdomi3, Tatsuya Ariga3, Hidenori
  Watanabe3, Takahito Kumazaki3, Kazuaki Hotta4,
  Hakaru Mizoguchi3, Akihiko Takahashi1, Tatsuo
  Okada2
• 1Kyushu University School of Health Sciences,
  2Kyushu University, 3Gigaphoton Inc., 4Ushio
  Inc.

8
Resists I
Session chairs G. Willson (W. Conley), M. Sato,
R. Dammel

• 0830 Recent Advancements in 157nm Resist
  Performance
• Karen Turnquest1, V. Graffenberg2, S. Patel2, D.
  Miller2, K. Dean2, A.-M. Goethals3, F. Van
  Roey3, Jan Hermans3, K. Ronse3, P. Wong4, S.
  Hansen4
• 1AMD Assignee to International SEMATECH,
  2International SEMATECH, 3IMEC, 4ASML
  Veldhoven
•  
• 0850 Performances of Fluoropolymer Resists for
  157-nm Lithography
• Seiichi Ishikawa, Minoru Toriumi, Tamio
  Yamazaki, Toshiro Itani
• Selete
•  
• 0910 Intel 157 nm Resist Benchmarking
• Jeanette Roberts1, Paul Zimmerman2, Robert
  Meagley1, Jim Powers1
• 1Intel Corporation, 2Intel Assignee to
  International SEMATECH

9
Resists I
Session chairs G. Willson (W. Conley), M. Sato,
R. Dammel

• 0930 Advances in Fluorinated Polymers for 157nm
  Lithography
• Will Conley1, Paul Zimmerman1, Daniel Miller1,
  Brian Trinque2, H.V. Tran1, Brian Osborn2,
  Charles Chambers2, Yu-Tsai Hsieh2, Schuyler
  Corry2, Takashi Chiba2, C. Grant Willson2
• 1International SEMATECH, 2Department of
  Chemistry Chemical Engineering, University of
  Texas at Austin
• 0950 Fluoropolymer Resists for Single Layer 157
  nm Lithography Optimization of Their Combined
  Properties
• M. K. Crawford, W. Farnham, A. E. Feiring, J.
  Feldman, R. H. French, K. W. Leffew, S.
  Nassirpour, V. A. Petrov, F. L. Schadt III, R. J.
  Smalley, F. C. Zumsteg
• DuPont
• 1010 Process and Formulation Development of
  Dissolution Inhibitors for 157 nm
  Microlithography A Progress Report
• Charles Chambers1, Will Conley2, Daniel Miller3,
  Brian Osborn1, Hoang V. Tran1, Brian Trinque1,
  Matthew Pinnow1, Takashi Chiba1, Paul Zimmerman4,
  C. Grant Willson3
• 1Departments of Chemistry and Chemical
  Engineering, University of Texas, 2Motorola
  assignee to International SEMATECH,
  3International SEMATECH, 4Intel assignee to
  International SEMATECH

10
Metrology
Session chairs J. Burnett, Y. Watakabe, W.
Harnisch

• 1100 Angle Resolved Scattering Measurements at
  157nm
• T.M. Bloomstein, D.E. Hardy, M. Rothschild
• MIT Lincoln Laboratory
•  
• 1120 VUV Spectroscopic Ellipsometry Studies of
  Key Substrate Materials for 157nm Lithography
• 1N.V. Edwards, 1S. Zollner, 1J. Kulik, 1Q. Xie,
  1M. Erickson, 1X.-D. Wang, 1D. Roan, 2T.E.
  Tiwald
• 1Motorola APDER 2J.A. Woollam Co.
•  
• 1140 Automated Metrology System Combining VUV
  Spectroscopic Ellipsometry and Grazing X-Ray
  Reflectance for the Characterization of Thin
  Films and Multilayers of 157nm Lithography
• Pierre Boher, Patrick Evrard, Jean Philippe
  Piel, Christophe Defranoux, Jean Louis Stehle
• SOPRA

11
Metrology
Session chairs J. Burnett, Y. Watakabe, W.
Harnisch

• 1200 Exicor Duv Birefringence Measurement System
  At Optical Lithography Wavelengths
• B. Wang, G. Bonar, A.Mikheyev, C. Mansfield, A.
  Breninger, J. List, R. Rockwell
• Hinds Instruments, Inc.
•  
• 12.20 High Brightness F2 (157nm) and ArF
  (193nm) Lamps
• Manfred Salvermoser, D.E. Murnick
• Rutgers University, Dept. of Physics

12
Masks
Session chairs C. Progler, N. Hayashi, C. Schilz

• 0830 Electron Beam Induced Processes and their
  Applicability to Mask Repair
• Johannes Bihr2, Volker Boegli1, Jens Greiser2,
  Hans W.P. Koops1
• 1NaWoTec GmbH, 2LEO Elektronenmikroskopie GmbH
•  
• 0850 Development of Bilayered TaSiOx Embedded
  Attenuating PSM
• Toshiaki Motonaga, Motoji Tabei, Kenji Noguchi,
  Masaharu Nishiguchi, Shiho Sasaki, Yasutaka
  Morikawa, Hiroshi Mohri, Morihisa Hoga, and Naoya
  Hayashi
• Dai Nippon Printing Co. Ltd.
•  
• 0910 157nm Attenuated PSM Films by Ion Beam
  Sputter Deposition
• Matthew Lassiter, Michael Cangemi, Darren Taylor
• Photronics Inc.
•  

13
Masks
Session chairs C. Progler, N. Hayashi, C. Schilz

• 0930 Implementation Challenges of Fused Silica
  Pellicles for 157-nm Lithography
• Andrew Grenville1, Emily Fisch2, Ivan Lalovic3,
  Emily Shu4, Kyle Spurlock5, Chris Van Peski6,
  Eric Cotte7, Phillip Reu7, Roxann Engelstad7,
  Edward Lovell7
• 1International SEMATECH/Intel Corporation, 2IBM
  Microelectronics, 3Advanced Micro Devices,
  4Intel Corporation, 5International
  SEMATECH/ Advanced Micro Devices, 6International
  SEMATECH, 7University of Wisconsin
• 0950 Feasibility of Defect Inspection of 157nm
  Reticles Through Thick Pellicles
• Jim Wiley
• KLA Tencor Corporation
• 1010 Fused Silica Pellicle Mounting Issues
• Chris Van Peski1, Andrew Grenville2, Emily Shu3
• 1International SEMATECH , 2 International
  SEMATECH/Intel Corporation, 3Intel Corporation
• 1030 Improvement of the Membrane Durability of
  Polymeric Pellicles
• Ikuo Matsukura
• ASAHI Glass Co. Ltd.

14
Resists II
Session chairs G. Willson (W. Conley), M. Sato,
R. Dammel

• 1120 Resist Contamination Issues at 157nm
• Kim Dean1, David Stark1, Jeff Meute2, Karen
  Turnquest3
• 1International SEMATECH, 2IBM Assignee to
  International SEMATECH, 3AMD Assignee to
  International SEMATECH
•  
• 1140 Evolution of Low Absorbance 157nm
  Fluoresists
• Gary Taylor, Sassan Nur, Cheng Bai Xu, Gary
  Teng, JoAnne Leonard
• Shipley Co.
•  
• 1200 Development of Silsesquioxane Based 157nm
  Photoresist an Update
• Raymond J. Hung1, Mikio Yamachika1, Takashi
  Chiba2, Haruo Iwasawa2, Akihiro Hayashi2,
  Noboru Yamahara2, Tsutomu Shimokawa2
• 1JSR Microelectronics Inc, 2JSR Corporation

15
Resists II
Session chairs G. Willson (W. Conley), M. Sato,
R. Dammel

• 1220 Platform Considerations for 157 nm
  Photoresists
• Ralph R. Dammel1, Francis Houlihan1, Raj
  Sakamuri1, Sang-Ho Lee1, M. Dalil Rahman1,
  Takanori Kudo1, Andrew Romano1, Larry Rhodes2,
  Chun Chang2, John Lipian2, Cheryl Burns2, Dennis
  A. Barnes2, Will Conley3, Daniel Miller3
• 1AZ Electronic Materials,Clariant Corporation,
  2Promerus LLC, 3International SEMATECH
•  
• 1240 Pragmatic Approaches to 157nm Resist Design
• Sanjay Malik1, Stephanie Dilocker1, Tadayoshi
  Kokubo2
• 1Arch Chemicals, Inc., 2FUJIFILM ARCH Co. Ltd

16
General / Closure

• 1430 An Analysis of 157nm Technology Cost of
  Ownership
• Walt Trybula and Phil Seidel
• International SEMATECH
•  
• 1450 Closing Remarks
• Luc Van den hove
• IMEC

17
Poster Session Metrology

• Line-Edge Roughness Calculation of Photoresists
  Using Off-LineAnalysis of Top-Down SEM Images
• G. P. Patsis1, T. Hoffmann2, G. Grozev3, A.
  Tserepi1, V. Constantoudis1, and E Gogolides1
• 1NCSR Demokritos, Institute of Microelectronics,
  2IMEC vzw, 3Assignee of ARCH Chemicals at IMEC
•  
• Analysis of Top-down SEM Images of Resists for
  Line-edge Roughness (LER) Calculations What are
  the Best Descriptors of LER Based on Scaling and
  Fractal Analysis?
• V. Constantoudis1, G. P. Patsis1, T. Hoffmann2,
  G. Grozev3, A. Tserepi1, and E Gogolides1
• 1NCSR Demokritos, Institute of Microelectronics,
  2IMEC vzw, 3Assignee of ARCH Chemicals at IMEC

18
Poster Session Masks

• Molecular Contamination in 157 nm
  LithographyFeasibility of Reticle Cleaning
• Anton Duisterwinkel1, Willem van Schaik2
• 1TNO TPD Center for Contamination Control, 2ASML,
  Veldhoven
•  
• Development of Hard Pellicle for 157 nm
  lithography
• K.Okada, K.Ootsuka, I.Ishikawa, Y.Ikuta,
  H.Kojima, T.Kawahara, T.Minematsu, H.Mishiro,
  S. Kikugawa and Y.Sasuga
• ASAHI Glass Co. Ltd.
• Fundamentals of Transparancy in Fluoropolymers
  for Use as 157nm Soft Pellicles
• Roger H. French1, Robert C. Wheland1, M. F.
  Lemon1, Edward Zhang2, Joseph Gordon2
• 1DuPont Co. Central Research, 2DuPont Photomasks
  Inc.
• Printing 65nm Dense Lines by Using Phase Masks at
  157nm Wavelength
• L.A. Wang, H. C. Chen
• Institute of Electro-Optical Engineeing, National
  Taiwan University

19
Poster Session Lasers

• A Novel Large Area 172nm Xe2 VUV Excimer Lamp
• Manfred Salvermoser, D.E. Murnick
• Rutgers University, Dept. of Physics
•  
• Compact Excimer Lasers at 157 nm for Metrology
  and Inspection
• A. Görtler, C. Strowitzki
• TuiLaser AG

20
Poster Session Materials

• The Small Optical Anisotropy in CaF2 on the
  Connection to Exciton Dispersion
• M. Letz1, W. Mannstadt1, M. Brinkmann1, G.
  Wehrhan2, L. Parthier2, E. Mörsen2
• 1Schott Glas, Research and Development, 2Schott
  Lithotec AG
•   
• Ultrasonic Sensor System For Calcium Fluoride
  Crystal Manufacture
• Joe Rose1, Chuck Morris1, John Schupp2, Kyle
  Spurlock3
• 1Pennsylvania State University, 2ACT Optics and
  Engineering, Inc., 3International SEMATECH
•  
• Optical Properties of Ca x Sr ( 1-x) F 2
  Crystals
• Robert W. Sparrow1, Charlene M. Smith2
• 1Specialty Materials Division, Corning
  Incorporated, 2Science and Technology Division,
  Corning Incorporated
•  
•  

21
Poster Session Materials

• Equipment for Annealing of Ca F2
• Serhat Yesilyurt, Shariar Motakef
• Cape Simulations, Inc.
• The Influence of Contamination on 157 nm Optical
  Components
• Lutz Raupach
• Jenoptik Laser, Optik, Systeme GmbH

22
Poster Session Exp. Tools

• EHS impacts associated with the emerging
  materials and processes of advanced
  photolithography
• Jeffrey Heaps
• International SEMATECH
•  
• 157nm 0.85NA Lens Upgrade at ISMT
• Jeff Meute1, Yung-Tin Chen1, Georgia Rich1,
  Julian Cashmore2, Malcolm Gower2, Dominic
  Ashworth2, Jim Webb3, Bruce Smith4
• 1International SEMATECH, 2Exitech Ltd., 3Corning
  Tropel,4Rochester Institute of Technology
• Process Simulation and Optimization with
  157-nmHigh NA Lens for 65 nm Node
• Yung-Tin Chen, Jeff Meute, Karen Turnquest, Kim
  Dean
• International SEMATECH
• Extreme-NA Water Immersion Lithography for 35-65
  nm Technology
• Bruce Smith, Hoyoung Kang, Anatoli Bourov
• Rochester Institute of Technology

23
Poster Session Exp. Tools

• Fluor Frontline Lithography Using Optical
  Refraction,The European Initiative to Enable
  157nm Lithography
• Judon Stoeldraijer1, Mieke Goethals2, Wolfgang
  Henke3, Ewald Mörsen4
• 1ASML Veldhoven, 2IMEC, 3Infineon Technologies
  AG, 4Schott Lithotec AG  

24
Poster Session Resists

• UV2Litho Usable Vacuum Ultra Violet Lithography
  
• A.M. Goethals1, R. Jonckheere1, F. Van Roey1, Jan
  Hermans1, A. Eliat1, K. Ronse1, P. Wong2, P.
  Zandbergen3, M. Vasconi4, E. Severgnini4, W.
  Henke5, C. Hohle6, D. Henry7, Ph. Thon7, L.
  Markey7, P. Schiavone8, D. Fuard8
• 1IMEC, 2ASML Veldhoven, 3Philips Research,
  4STMicroelectronics S.r.l Agrate Brianza,
  5Infineon Technologies AG Dresden, 6Infineon
  Erlangen, 7STMicroelectronics Crolles, 8CNRS
•  
• Printing 65nm Dense Lines by Using Phase Masks
  at157 nm Wavelength
• L.A. Wang, H. C. Chen
• Institute of Electro-Optical Engineeing, National
  Taiwan University

25
Poster Session Resists

• New Silsesquioxane and Siloxane Based Resist
  Copolymersfor 157nm Lithography
• V. Bellas1, E. Tegou1, I. Raptis1, E. Gogolides1,
  P. Argitis1,E. Sarantopoulou2, A.C. Cefalas2
• 1Institute of Microelectronics, NCSR Demokritos,
  2Institute of Physical and Theoretical Chemistry,
  NHRF  
• Impact of Resist Absorbance on CD Control
• Laurent Markey1, Peter Zandbergen2
• 1STMicroelectronics, 2Philips Semiconductors
• Thermal Behavior of Dissolution InhibitorsGeunsu
  Lee1, Paul Zimmerman1, Will Conley1, Daniel
  Miller1,Charles Chambers2, Brian Osborn2, Shiro
  Kusumoto2, C. Grant Willson2
• 1International SEMATECH, 2Department of
  chemistry, University of Texas

26
Poster Session Resists

• Parameter Extraction for 157nm Photoresists
• Will Conley1, J. Bendik2, Daniel Miller3, Paul
  Zimmerman4, Kim Dean3,John Petersen5 , Jeff
  Byers6, Ralph Dammel7, Raj Sakumari7, Frank
  Houlihan7
• 1Motorola assignee to International SEMATECH,
  2Dynamic Intelligence Inc. 3International
  SEMATECH, 4Intel assignee to International
  SEMATECH, 5Petersen Advanced Lithography,
  6KLA-Tencor Finle Technologies
  Division,7Clariant Corporation
• Fluoropolymer Resists for 157 nm Lithography
• Vaishali Vohra1, Katsuji Douki1, Xiang-Qian Liu1,
  Young-Je Kwark1, Christopher Ober1, Will
  Conley2, Daniel Miller2, Paul Zimmerman2
• 1Department of Materials Science Engineering,
  Cornell University, 2International SEMATECH
• Molecular Anisotropy in 157nm Photoresist
  Materials
• Jeanette Roberts, Robert Meagley, Adam J. Schafer
  
• Intel Corporation

27
Poster Session Resists

• Negative Photoresist for 157 nm Microlithography
• Paul Zimmerman1, Brian Trinque2, Will Conley3,
  Daniel Miller4, Ralph Dammel5, Andrew Romano5,
  Raj Sakumari, Shiro Kumamoto2, Hoang Tran2,
  Matthew Pinnow2, Ryan Callahan2, Charles
  Chambers2, C. Grant Willson2
• 1Intel assignee to International SEMATECH,
  2Departments of Chemistry and Chemical
  Engineering, University of Texas, 3Motorola
  assignee to International SEMATECH,
  4International SEMATECH, 5Clariant Corporation
• Synthesis and Properties of Noval Fluoropolymer
  for 157nm Photoresists by Cyclo-polymerization
• Osamu Yokokoji1, Shun-ichi Kodama1, Isamu
  Kaneko1, Yoko Takebe1, Shinji Okada1, Yasuhide
  Kawaguchi1, Shigeo Irie2, Seiichi Ishikawa2,
  Minoryu Toriumi2, Toshiro Itani2
• 1Asahi Glass Co. Ltd.,2Selete
• Advances in TFE Based Fluoropolymers for 157nm
  Lithography A Progress Report
• Iqbal Sharif1, Darryl DesMarteau1, Will Conley2,
  Paul Zimmerman3, Daniel Miller4, Guen Su Lee5,
  Charles Chambers6, Brian Trinque6, Takashi
  Chiba6, Brian Osborn6, C. Grant Willson4
• 1Clemson University, Dept of Chemistry, 2Motorola
  assignee at International SEMATECH, 3Intel
  assignee at International SEMATECH,
  4International SEMATECH, 5Hynix assignee at
  International SEMATECH, 6Department of Chemistry
  Chemical Engineering, University of Texas at
  Austin