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Vias and Capacitors

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Vias and Capacitors Chris Allen (callen_at_eecs.ku.edu) Course website URL people.eecs.ku.edu/~callen/713/EECS713.htm – PowerPoint PPT presentation

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Title: Vias and Capacitors


1
Vias and Capacitors
Chris Allen (callen_at_eecs.ku.edu) Course website
URL people.eecs.ku.edu/callen/713/EECS713.htm
2
Vias
  • Via, also known as plated through hole (PTH)
  • Purpose
  • Mounting of through-hole components (mechanical
    and electrical)
  • Routing signal traces between layers (electrical)
  • Thermal resistance reduction (mechanical)
  • Different requirements for each via purpose
  • Issues
  • Mechanical tolerances and reliability
  • Capacitance and inductance
  • Via placement / return current path routing
    issues
  • Via anatomy and parameters
  • Pad diameter
  • Hole diameter
  • Clearance hole diameter
  • Plated hole diameter
  • Filled vias (solder, epoxy)

3
Via requirements
  • Hole diameter requirements
  • For mechanical vias (mounting through-hole
    components)
  • via hole diameter gt lead diameter by at least 10
    mils
  • Drilled hole diameter larger than minimum hole
    size
  • determined by plating variations
  • For electrical vias (not mechanical or thermal
    vias)
  • minimum via diameter is related to board
    thicknessT/Dvia minimum, T board thickness,
    Dvia via diameterlimit comes from via barrel
    cracking (mechanical issue)Text says min
    T/Dvia 5 Board manufacturers recommendmin
    T/Dvia 7 to 15

4
Via requirements
  • Pad diameter requirements
  • Pad diameter must be larger than hole diameter by
    a margin determined by
  • minimum annular ring requirement
  • hole diameter
  • hole alignment tolerance
  • Example board manufacturersmin pad diameter 6
    to 14 milsmin annular ring width 5 milsmin
    finished hole diameter 10 milsmin drill diameter
    6 to 10 milsmin drill laser diameter 3 to 5
    milsmax plated hole diameter 246 mils

See example PCB fabrication capabilities and
design guidelines on class website under Other
class documents
5
Via requirements
  • Minimum clearance requirements
  • The minimum clearance between circuit elements
    (e.g., via pad, trace, component pad) determined
    several factors
  • the precision of etching processrequired to
    yield good parts as small imperfections could
    lead to shorts between circuit elements
  • the assembly process usedwave soldering, solder
    bridges may be created at gaps? short circuits
  • the minumum clearance or air gap to avoid
    breakdown or arcinghigh voltages (kV) can
    breakdown dielectrics or air if the gap is too
    small
  • Minimum clearance may range from 2 to 20 mils
    depending on the process and copper thickness

6
Via requirements
  • Thermal relief vias
  • Power and ground planes offer low thermal
    resistance and act as heat sinks
  • Vias for through-hole mounted components that
    connect to these planes often use thermal relief
    via pad patterns on these planes to increase the
    thermal resistance of the path
  • Examples of thermal relief via pads

7
Electrical effects of vias
  • Capacitance
  • Capacitance between via and ground plane or any
    other plane
  • where C is capacitance (pF)?r is relative
    dielectric constantT is PC board thickness
    (inches)D1 is diameter of via pad (inches)D2 is
    diameter of clearance hole (inches)
  • this formula assumes a via pad on every layer
  • Typically via capacitance will be relatively
    small and the primarily impact will be degraded
    signal rise time

8
Electrical effects of vias
  • Inductance
  • Via inductance is approximated by
  • where L is inductance (nH)h is the via length
    (inches)d is the via barrel diameter (inches)
  • Note that h ? T from the capacitance calculation,
    h is the length of the via over which the signal
    passes

9
Electrical effects of vias
  • Example
  • Consider a 100-mil thick FR-4 circuit board (T
    0.1) with a 20-mil via barrel diameter (d
    0.02)a 30-mil via pad diameter (D1 0.3)a
    50-mil clearance hole diameter (D2 0.05)a
    20-mil via length to the power plane (h 0.02)
  • Find Cvia, Lvia, and draw the equivalent circuit

10
Electrical effects of vias
  • Effects of Lvia, Cvia
  • Both Lvia and Cvia result in increased signal
    rise time
  • Also Lvia increases the impedance to the power or
    ground plane
  • Example consider 10G GaAs technology, Tr 150
    ps, Zo 50 ?Cvia 1.02 pF, Lvia 0.24 nH
  • Rise time degradation
  • Impedance to power plane

11
Vias and return current path
  • Recall that the return current path flows along
    the path of least impedance (inductance)
  • The proximity effect and inductance cause the
    return current to flow beneath the signal trace
  • Consider what happens when a signal changes
    layers through a via
  • The signal follows the signal trace where it can
  • As the signal trace changes layers, and the
    return current cannot, the inductance is
    increased
  • Rise time increases
  • Crosstalk increases

12
Vias and return current path
  • How to avoid the problem ofreturn-path current
    failing to shadow the signal current
  • Keep all high-speed signal traces on its initial
    layerPractical? May be used for clock signals
  • Restrict signal traces to either side of a
    particular plane
  • Provide vias between ground planes at points
    where the signal changes layers (near signal
    vias)
  • Distribute ground vias everywhereGood for DC
    purposes also

13
Decoupling capacitors and return path
  • Return current plane jumping at the termination
    resistor, RT
  • To permit the return current to follow the
    signal, AC couple VTT plane to GND plane through
    decoupling capacitor, C
  • Placement of the decoupling capacitor depends on
    the power/ground plane arrangement

14
Decoupling capacitor placement
  • Using the VTT plane for return path, decoupling
    capacitors are placed between GND and VTT near
    the driver chip
  • Recall that in the GaAs package, the silicon chip
    carrier contained integrated capacitors between
    VTT and VDDO
  • Otherwise, decoupling capacitors are placed near
    the terminating resistor between GND and VTT

15
Bypass capacitors
  • Stable reference voltages
  • For CMOS and TTL logic families, the reference
    voltage (used to determine if an input is HI or
    LO) is derived from the supply voltage
  • Therefore a noisy supply voltage will produce a
    noisy reference voltage? bit errors
  • Two questions How can noise get into the
    supply voltage?How to reduce this noise?
  • Inductive distribution system can lead to a noisy
    supply voltage.Transient supply currents result
    in voltage variations, V L dI/dt.Similarly, an
    inductance can result in noise on ground
    reference.

16
Bypass capacitors
  • Stable reference voltages
  • A solution is to use ground andpower planes
  • To reduce the noise, follow these rules
  • Use low-impedance ground between devices (R
    j?L)
  • Use low-impedance power connection between
    devices
  • Provide low-impedance path between power and
    ground
  • Clearly power and ground planes satisfy 1 2
  • To achieve 3, need lower impedance by providing
    alternative path
  • Bypass capacitors provide low-impedance path
    between power and ground
  • Therefore locate bypass capacitors near every
    integrated circuit

17
Vias and return current path
  • For ECL and GaAs logic, a reference voltage (VBB)
    is generated on chip and this reference voltage
    varies only slightly with variations in Vsupply
    and temperature
  • To ensure a common reference voltage GaAs logic
    devices provide a VBBS output and receive as
    inputs VBB so that all devices share a common
    threshold level
  • Bypass capacitors are also needed with these
    devices

ECL 2-input OR/NOR
18
Vias and return current path
  • When interfacing ECL with GaAs, the ECL devices
    VBB reference level can be shared with the GaAs
    devices
  • How to determine VBB for ECL circuit?
  • Capacitor used to prevent oscillations
  • VBB is DC -1.3 V
  • While ECL operates by current steering, i.e., it
    draws about the same current regardless of
    current state, bypass capacitors are still needed
    between VEE and GND to provide low-impedance
    path, otherwise return path goes through the
    Vsupply

19
The capacitor
  • Consider a physical capacitor
  • The equivalent circuit for this capacitor is
  • Therefore these can be ignored, for a simplified
    capacitor model
  • where
  • Ls inductance, lead or self or equvalent series
    inductance, ESL (H)
  • Rs equivalent series resistance, ESR (?)
  • C capacitance (F)

typically Rdiel is large (low loss)Rplate is
smallClead ltlt C
20
The capacitor
  • Consider the impedance of the capacitor model
  • Z Rs j(?Ls 1/?C)
  • The capacitor model behaves differently depending
    on the frequency
  • At low frequencies,
  • Z ? Rs j 1/?Cbehaves like an ideal capacitor
    when Rs ltlt 1/?C
  • At resonance frequency,
  • Z Rs
  • purely resistive over narrow frequency range
  • At high frequencies,
  • Z ? Rs j ?Ls
  • behaves like an ideal inductor when Rs ltlt ?Ls

21
The capacitor
  • Composite behavior
  • The frequency,
  • is called the self-resonant frequency or
    series-resonant frequency (SRF)
  • for f lt fo, capacitor behaves capacitively
  • for f gt fo, capacitor behaves inductively
  • In our applications (bypass and decoupling
    capacitors) we are seeking a low-impedance path
    at high frequencies
  • We need capacitors with self-resonant frequencies
    above Fknee
  • Otherwise, instead of a low-impedance path to a
    power or ground plane, we have a high-impedance
    path

22
Capacitor specifications
  • Real capacitors
  • Typical values
  • C capacitor value
  • ESR (Rs) 1 m? to 1 ?
  • ESL (Ls) 5 to 10 nH for leaded capacitors lt
    1 nH for leadless capacitors
  • Sometimes ESR is specified in terms of a
    dissipation factor (DF)
  • DF Rs/Xc ratio of energy dissipated to energy
    stored per cycle
  • DF ?RsC also includes dielectric loss (tan
    ?)
  • DF 1/Q where Q is the quality factor
  • Consider a 100-pF capacitor with DF of 7?10-5 at
    100 MHz

23
Capacitor specifications
  • Most capacitors have self-resonant frequencies,
    fo, in the 10s of MHz to 100s of MHz
  • For ECL (Tr 700 ps), Fknee 714 MHzGaAs (Tr
    150 ps), Fknee 3.3 GHz
  • To find capacitors with fo in the GHz range, must
    use chip capacitors
  • Consult RF and microwave component vendors to
    find these caps
  • Typical capacitor values are relatively small
    1000 pF or less
  • at 100 MHz, Xc 1/(2? 108 10-9) 1.59 ?
  • at 1 GHz, Xc 1/(2? 109 10-9) 159 m?
  • if fo 1 GHz, then Ls (2?fo)2C-1 25 pH

24
Capacitor specifications
  • Other capacitor characteristics
  • Dielectric absorption (DA)
  • Hystersis-like internal charge distributionresidu
    al charge or charge density
  • This characteristic is a factor in
    sample-and-hold circuits not a factor in
    high-frequency decoupling
  • Peak working voltage (WVDC)
  • Limited by dielectric breakdown characteristics,
    orpower dissipation (heating) at the maximum
    frequency
  • Variations in capacitor value
  • Due to temperature temperature coefficient, TC
    (ppm/?C)
  • Due to aging or time ( change)
  • Due to voltage

25
Capacitor specifications
  • Dielectric materials
  • Capacitance value depends onarea (A), spacing
    between plates (d), relative dielectric constant
    (?r)
  • By using various dielectric materials, different
    properties are obtained
  • The following tables list some common capacitor
    types using dielectric material as the
    distinguishing parameter

26
Capacitor specifications
  • from Horowitz and Hill, The Art of Electronics,
    Cambridge Press, 1989

27
Capacitor specifications
  • from Horowitz and Hill, The Art of Electronics,
    Cambridge Press, 1989

28
Capacitor specifications
  • from Guinta, S., Ask The Applications Engineer
    21 Capacitance and Capacitors, Analog
    Dialogue, 30-2, pg. 21, 1996.

29
Capacitor specifications
  • from Guinta, S., Ask The Applications Engineer
    21 Capacitance and Capacitors, Analog
    Dialogue, 30-2, pg. 21, 1996.

30
Capacitor selection
  • A variety of capacitor values are required in
    high-speed digital circuit designs 100 pF to
    10s of ?F
  • For low-frequency applications (DC to few MHz)
  • large value capacitors, electrolytic capacitors
    can be used, however these have a poor frequency
    responseself-resonant frequency few MHz
  • For high-frequency decoupling or bypass
    applications
  • capacitors with high self-resonant frequencies
    are needed
  • these devices physically small chip capacitors
    are needed
  • The dielectric materials used for high-frequency
    applications include
  • Material . ?r . DF .
  • Barium titanate (BaTiO3) 8000 0.1
  • Alumina 9 5 ? 10-4
  • Porcelain 15 7 ? 10-5

31
Capacitor selection
  • Clearly barium titanates (BaTiO3) large ?r makes
    it a desirable material for capacitor use
  • However its large dissipation factor (low Q)
    makes it less desirable
  • In addition, BaTiO3 has other disadvantages
  • large temperature coefficient
  • piezoelectric effects
  • poor aging characteristics
  • porous (moisture and chemical penetration affect
    performance and reliability)
  • lossy (tan ?)
  • Various blends of BaTiO3 overcome some of these
    problems
  • these include Z5U and X7R dielectrics that are
    discussed in the text
  • Other high-frequency capacitors use porcelain
  • lower DF, non-porous, non-piezoelectric

32
Chip capacitor types
  • Chip capacitors come in two types
  • Single layer lower capacitor values, higher
    self-resonant frequency
  • Multi-layer higher capacitor values, lower
    self-resonant frequency

Single-layer capacitors
Multi-layer capacitor
33
Capacitor characteristics
34
Capacitor characteristics
35
Chip capacitor types
  • Parallel resonance
  • In addition to series resonant frequency,
    parallel resonance frequencies also exist due to
    internal inductance
  • One way to reduce parallel resonance is to mount
    capacitor on its side supporting uniform internal
    current distribution
  • However series resonance (lower freq than
    parallel resonance) is the limiting factor of
    interest

36
Chip capacitor types
  • Lower capacitance values ? higher resonant
    frequencies
  • ATC 100 Case B C 1000 pF ? fo 250 MHz C
    4 pF ? fo 3 GHz
  • For the highest resonant frequency, use single
    layer capacitors
  • C 1000 pF ? fo 600 MHz
  • Which capacitor should be used?
  • What is the maximum frequency of interest?
    (Fknee)
  • What Xc can be tolerated?

Single-layer capacitor
Multi-layer capacitor
37
Chip capacitor types
  • A typical circuit board will use a variety of
    capacitors
  • A group of electrolytic capacitors (e.g., 100 µF,
    10 µF, 1 µF) clustered near where the DC power
    enters the circuit board
  • Groups of bypass chip capacitors near the
    integrated circuits
  • Groups of decoupling chip capacitors whose
    placement depends on the board stackup
  • Appropriate selection of capacitor values can
    involve time-domain or frequency-domain analysis
  • Time domain estimate the charge needed to
    support transient currents during switching
    events, and size the capacitance accordingly
  • Frequency domain think of capacitors as filter
    and select values to provide low impedance path
    from power supply or power plane over DC to Fknee
    frequency range

38
Chip capacitor types
  • To provide the desired decoupling or bypass
    operationit may be necessary to use several
    capacitors in parallel
  • An array of bypass capacitors is more
    effective than a single bypass capacitor.
  • Within a certain radius, all the bypass
    capacitors will act as if connected in parallel,
    lowering the power-to-ground impedance. The
    effective radius within which this effect works
    is equal to l/12 where l is the electrical length
    of the rising edge. All capacitors within the
    diameter of l/6 act in concert as a lumped
    circuit.

39
Chip capacitor types
  • Assuming the decoupling capacitor passes signal
    components with frequencies above 10 kHz, what
    path do return currents follow to close the loop
    for signal components below 10 kHz (e.g., 1 kHz,
    DC)?

40
Chip capacitor types
  • Proper bypass capacitor placement

41
Chip capacitor types
  • Proper bypass capacitor placement

42
Chip capacitor types
  • Proper bypass capacitor placement

43
Chip capacitor types
  • Broadband capacitors are relatively new on the
    market
  • These offer low impedance over a broad frequency
    range
  • Achieved by integrating various capacitors within
    a single package

520L C 10 nF, 160 kHz to 16 GHz 530L C
100 nF, 16 kHz to 18 GHz 545L C 100 nF, 16
kHz to 40 GHz 550L C 100 nF, 16 kHz to 40 GHz
44
Summary
  • Vias serve a variety of purposes in high-speed
    digital circuit boards
  • Via parameters are driven by manufacturing and
    reliability issues
  • The capacitive effects of vias are less
    significant than inductive effects
  • Via placement can play an important role in
    return current path
  • Decoupling capacitors are used to shunt current
    to the return path
  • Bypass capacitors are used to suppress noise on
    power and ground
  • Real capacitors have resistance and inductance
  • Real capacitors have a self-resonant frequency
    (SRF)
  • Below the SRF it behaves capacitively
  • Above the SRF it behaves inductively
  • Groups of capacitors are used to provide a
    capacitive response over a broad range of
    frequencies
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