???Yen-Kuang%20Kuo

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???Yen-Kuang Kuo ????????????????? ????????????? ?
??? ykuo_at_cc.ncue.edu.tw ?? http//ykuo.ncue.edu
.tw
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??? ???????

• 1997?12???????????????????,?????????,??800??????,?
  ???????????
• ?????????,????????????(LED)????????(OLED)??????(So
  lar Cell)??????

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??????????

• ????????????????????????????????(LD)??????(LED)???
  ????????????????,???????????????/??/??????????
• ???????,??????????????????????????(OLED)??????????
  ?????,???????LASTIP?PICS3D?APSYS?SimuLED?SimuLAMP?
  ?
• ?????????????????????

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??????????

• LASTIP???? (???????? ) (Crosslight Software
  Inc., Canada)
• PICS3D???? (?????????DFB???Self-Pulsation?? )
  (Crosslight)
• APSYS???? (LED? OLED ???????RC-LED??????HEMT )
  (Crosslight)
• SimuLED???? (LED?LD????,????STR
  Group????,????????)
• SimuLAMP???? (LED????????,????STR
  Group????,????????)

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??????????

• ??? (2?)
• ???? (632.8nm????)
• ????? (488nm??, 514.5nm??, 351.1nm?????)
• NdYAG?? (EO Q-switched, 1064/532/355/266 nm)
• ????????????? (??, ??, ??????)
• ????? (Birefringent Filter)
• ?????(LED/OLED)???I-V????? (PC-controlled)
• ?????/???????? (PC-controlled current source)
• ??????? (10K 325K)
• ??????????(CCD)???? (1340100 Pixels)
• ????? (Lock-in Amplifier)
• ????? (Photo-Multiplier Tube)
• ??? (Power Meters) (3?)
• ?????????? (ECV, ???GaN??)
• ????? (500 MHz Bandwidth, 5 GHz Sampling Rate)
• ?????? (Response time 1 ns)

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????(Photoluminescence)????
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????????????

• ??????????????????????(1/3) (NSC
  99-2119-M-018-002-MY3)
• ??????????InGaN LED?????? (??????????????)
• ??????????????????????? (99????????????????,NSC
  99-2815-C-018-008-M)

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??????????

• Light-Emitting Diodes (LED)
• Laser Diodes VCSEL
• Light-Emitting Diodes (OLED)
• Solar Cells (Si III-V)
• Others (III-N Band Structures Bowing
  Parameters, Solid-State Lasers, etc.)
  (??SCI???????10???)

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??????????????

• ????????????????,???????????????
• ???????????????,??????????Free Parameters,????????
  ??????????
• ???,????????????????????????,???????
• ????????????,???????????????????,?????????????,???
  ?????,???????????

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APSYS???? (Advanced Physical Models of
Semiconductor Devices)

• LED?OLED??Solar Cell??????????????????,?????APSYS?
  ???????
• APSYS?????Poissons equation?current continuity
  equation?carrier energy transport
  equation???quantum mechanical wave
  equation????,????????????????????
• APSYS???Ray-Tracing??,?????????????????????????

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APSYS???????

• ???-??(L-I)???-??(I-V)?
• ???????????
• ??????????
• ???????
• ????????????
• ???????
• ????????????
• ??????????????
• ??????????????

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Examples of Simulations

• Simulation of LEDs
• Simulation of Laser Diodes
• Simulation of VCSELs
• Simulation of OLEDs
• Simulation of Solar Cells

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• Simulation of LEDs

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• After comparing, preferable designs of the
  staggered QWs are In0.20Ga0.80N (1.4
  nm)In0.26Ga0.74N (1.6 nm), In0.21Ga0.79N (1.4
  nm)In0.25Ga0.75N (1.6 nm), and In0.22Ga0.78N
  (1.5 nm)In0.24Ga0.76N (1.5 nm), which are named
  as structure A, structure B, and structure C,
  respectively.

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• The effective potential height for holes in the
  valence band of the InGaN/AlGaN structure is
  lower than that of the InGaN/GaN one (i.e., 0.255
  eV vs. 0.282 eV) owing to the slighter
  polarization effect in the last-barrier/EBL
  interface.
• The effective potential height for the electrons
  in the conduction band of the InGaN/AlGaN
  structure becomes higher than the other structure
  (i.e., 0.367 eV vs. 0.355 eV), which denotes the
  enhancement of electron confinement.

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• The light performance of the blue InGaN LEDs
  emitting in a spectral range from 435 to 445 nm
  can be enhanced effectively when the conventional
  GaN barrier layers are replaced by the
  low-indium-content In0.02Ga0.98N and
  In0.05Ga0.95N barrier layers.
• The light performance of the 445-nm LEDs with the
  In0.05Ga0.95N barrier layers is improved due to
  the increased overlap of electrons and holes
  inside the QW close to the p-side layers, which
  is the major source for radiative recombination.

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• The strong electric field caused by the
  piezoelectric polarization charges at the
  interface between the P-AlGaN and barrier layer
  lowers the conduction band energy in the last
  barrier. Our calculation shows that the
  percentages of electron leakage current for the
  LEDs with P-AlGaN and N-AlGaN are 46.1 and 4.5,
  respectively, at 120 mA.

• Besides the relatively uniform distribution of
  holes in the QWs, the sufficiently reduced
  electron leakage current is also a major cause
  for the improvement in efficiency droop.

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• Simulation of Laser Diodes

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• Simulation of VCSELs

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• Simulation of OLEDs

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• Simulation of Solar Cells

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???????????

• Investigation of current matching for
  In0.49Ga0.51P/GaAs/Ge triple-juction tandem solar
  cell

Band diagram
Schematic drawing of the solar cell structure
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?????Cells?I-V??
Device current is limited by the smallest
current.
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??Cell?????

• Change the thickness of middle cell base layer.

• Change the thickness of middle cell emitter layer
  when the base layer thickness is fixed at 3.8 µm.

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????Cells?????
Sun light power
Sun light power at top cell
decay
Sun light power at middle cell

• Base layer thicknesses of middle
• cell ? 3.8 µm
• Emitter layer thicknesses of
• middle cell ? 0.17 µm
• Base layer thickness of top cell
• ? 0.236 µm

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??????

• The photon current density of the device can be
  improved by enhancing the middle cell photon
  current density.

Schematic drawing of optimized structure
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?????????????

• The short-circuit current density is improved due
  to the achievement of current match.
• The short-circuit current density is improved
  from 16.56 to 18.78 mA/cm2 and the conversion
  efficiency is increased by about 3.

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Recent publication (I)

• Yen-Kuang Kuo, Jih-Yuan Chang, and Miao-Chan
  Tsai, Enhancement in hole injection efficiency
  of blue InGaN light-emitting diodes from reduced
  polarization by some specific designs on electron
  blocking layer, Optics Letters, Accepted 4
  September 2010. (SCI) 2008 Impact Factor
  3.772, Ranked 4/64 in Optics
• Chih-Teng Liao, Miao-Chan Tsai, Bo-Ting Liou,
  Sheng-Horng Yen, and Yen-Kuang Kuo, Improvement
  in output power of a 460-nm InGaN light-emitting
  diode using staggered quantum well, Journal of
  Applied Physics, Accepted 8 July 2010. (SCI)
  2008 Impact Factor 2.201, Ranked 20/95 in
  Physics, Applied Physics
• Yen-Kuang Kuo, Syuan-Huei Horng, Miao-Chan Tsai,
  Sheng-Horng Yen, and Shu-Hsuan Chang, Effect of
  normal and reversed polarizations on optical
  characteristics of ultraviolet-violet InGaN laser
  diodes, Optics Communications, Vol. 283, Issue
  19, pp. 36983702, 1 October 2010. (SCI) 2008
  Impact Factor 1.552, Ranked 23/64 in Optics
• Jih-Yuan Chang, Miao-Chan Tsai, and Yen-Kuang
  Kuo, Advantages of blue InGaN light-emitting
  diodes with AlGaN barriers, Optics Letters, Vol.
  35, No. 9, pp. 13681370, 1 May 2010. (SCI) 2008
  Impact Factor 3.772, Ranked 4/64 in Optics

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Recent publication (II)

• Yen-Kuang Kuo, Miao-Chan Tsai, Sheng-Horng Yen,
  Ta-Cheng Hsu, and Yu-Jiun Shen, Effect of p-type
  last barrier on efficiency droop of blue InGaN
  light-emitting diodes, IEEE Journal of Quantum
  Electronics, Vol. 46, No. 8, pp. 12141220,
  August 2010. (SCI) 2008 Impact Factor 2.413,
  Ranked 37/229 in Engineering, Electrical
  Electronic
• Miao-Chan Tsai, Sheng-Horng Yen, and Yen-Kuang
  Kuo, Carrier transportation and internal quantum
  efficiency of blue InGaN light-emitting diodes
  with p-doped barriers, IEEE Photonics Technology
  Letters, Vol. 22, No. 6, pp. 374376, 15 March
  2010. (SCI) 2008 Impact Factor 2.173, Ranked
  12/64 in Optics
• Jun-Rong Chen, Yung-Chi Wu, Shih-Chun Ling,
  Tsung-Shine Ko, Tien-Chang Lu, Hao-Chung Kuo,
  Yen-Kuang Kuo, and Shing-Chung Wang,
  Investigation of wavelength-dependent efficiency
  droop in InGaN light-emitting diodes, Applied
  Physics B Lasers and Optics, Vol. 98, No. 4, pp.
  779789, March 2010. (SCI) 2008 Impact Factor
  2.167, Ranked 13/64 in Optics
• Yen-Kuang Kuo, Syuan-Huei Horng, Sheng-Horng Yen,
  Miao-Chan Tsai, and Man-Fang Huang, Published
  online 26 November 2009, Effect of polarization
  state on optical properties of blue-violet InGaN
  light-emitting diodes, Applied Physics A
  Materials Science Processing, Vol. 98, No. 3,
  pp. 509515, 4 January 2010. (SCI) 2008 Impact
  Factor 1.884, Ranked 30/95 in Physics, Applied
  Physics

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Recent publication (III)

• Yen-Kuang Kuo, Jih-Yuan Chang, and Mei-Ling Chen,
  Role of electron blocking layer in III-nitride
  laser diodes and light-emitting diodes,
  Proceedings of SPIE, Vol. 7597,
  pp.759720-1759720-9, Published online 25
  February 2010. (EI)
• Shu-Hsuan Chang, Miao-Chan Tsai, Sheng-Horng Yen,
  Shu-Jeng Chang, and Yen-Kuang Kuo, Numerical
  simulation on high-efficiency GaInP/GaAs/InGaAs
  triple-junction solar cells, Proceedings of
  SPIE, Vol. 7597, pp.759721-1759721-12, Published
  online 25 February 2010. (EI)
• ???????????????????????, ????????????????????,
  ????, ?16?, ?6?, ?118?129?, 2010?6?.
• Yen-Kuang Kuo, Jih-Yuan Chang, Miao-Chan Tsai,
  and Sheng-Horng Yen, Advantages of blue InGaN
  multiple-quantum well light-emitting diodes with
  InGaN barriers, Applied Physics Letters, Vol.
  95, No. 1, pp. 011116-1 - 011116-3, Published
  online 10 July 2009. (SCI) 2008 Impact Factor
  3.726, Ranked 10/95 in Physics, Applied Physics
• Yen-Kuang Kuo, Miao-Chan Tsai, Sheng-Horng Yen,
  Ta-Cheng Hsu, and Yu-Jiun Shen, Enhancement of
  light power for blue InGaN light-emitting diodes
  by using low-indium-content InGaN barriers, IEEE
  Journal of Selected Topics in Quantum
  Electronics, Vol. 15, No. 4, pp. 1115-1121, 5
  August 2009. (SCI) 2008 Impact Factor 2.518,
  Ranked 9/64 in Optics

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Recent publication (IV)

• Yen-Kuang Kuo, Miao-Chan Tsai, and Sheng-Horng
  Yen, Numerical simulation of blue InGaN
  light-emitting diodes with polarization-matched
  AlGaInN electron-blocking layer and barrier
  layer, Optics Communications, Vol. 282, Issue
  21, pp. 4252-4255, 1 November 2009. (SCI) 2008
  Impact Factor 1.552, Ranked 23/64 in Optics
• Sheng-Horng Yen, Miao-Chan Tsai, Meng-Lun Tsai,
  Yu-Jiun Shen, Ta-Cheng Hsu, and Yen-Kuang Kuo,
  Effect of n-type AlGaN layer on carrier
  transportation and efficiency droop of blue InGaN
  light-emitting diodes, IEEE Photonics Technology
  Letters, Vol. 21, No. 14, pp. 975-977, 15 July
  2009. (SCI) 2008 Impact Factor 2.173, Ranked
  12/64 in Optics
• Sheng-Horng Yen, Miao-Chan Tsai, Meng-Lun Tsai,
  Yu-Jiun Shen, Ta-Cheng Hsu, and Yen-Kuang Kuo,
  Published online 26 June 2009, Theoretical
  investigation of Auger recombination on internal
  quantum efficiency of blue light-emitting
  diodes, Applied Physics A Materials Science
  Processing, Vol. 97, Issue 3, pp. 705-708, 4
  November 2009. (SCI) 2008 Impact Factor 1.884,
  Ranked 30/95 in Physics, Applied Physics
• Miao-Chan Tsai, Sheng-Horng Yen, Shu-Hsuan Chang,
  and Yen-Kuang Kuo, Effect of spontaneous and
  piezoelectric polarization on optical
  characteristics of ultraviolet AlGaInN
  light-emitting diodes, Optics Communications,
  Vol. 282, Issue 8, pp. 1589-1592, 15 April 2009.
  (SCI) 2008 Impact Factor 1.552, Ranked 23/64
  in Optics

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Recent publication (V)

• Jun-Rong Chen, Yung-Chi Wu, Tien-Chang Lu,
  Hao-Chung Kuo, Yen-Kuang Kuo, and Shing-Chung
  Wang, Numerical study on lateral mode behavior
  of 660-nm InGaP/AlGaInP multiple-quantum-well
  laser diodes, Optical Review, Vol. 16, No. 3,
  pp. 375382, Published online 9 June 2009. (SCI)
  2008 Impact Factor 0.545, Ranked 51/64 in
  Optics
• Yen-Kuang Kuo, Ying-Chung Lu, Miao-Chan Tsai, and
  Sheng-Horng Yen, Numerical simulation of 405-nm
  InGaN laser diodes with polarization-matched
  AlGaInN electron-blocking layer and barrier
  layer, Proceedings of SPIE, Vol. 7211, 72111B-1
  72111B-8, January 2009. (EI)
• Bo-Ting Liou, Miao-Chan Tsai, Chih-Teng Liao,
  Sheng-Horng Yen, and Yen-Kuang Kuo, Numerical
  investigation of blue InGaN light-emitting diodes
  with staggered quantum wells, Proceedings of
  SPIE, Vol. 7211, pp. 72111D-1 72111D-8, January
  2009. (EI)
• Shu-Hsuan Chang, Chien-Yang Wen, Yi-Hsiang Huang,
  and Yen-Kuang Kuo, Numerical simulation on white
  OLEDs with dotted-line doped emitting layers,
  Proceedings of SPIE, Vol. 7213, 72131J-1
  72131J-8, January 2009. (EI)

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Blue Laser Laboratory
Thank you for your attention.