Novel SiGe Semiconductor Devices for Cryogenic Power Electronics

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Novel SiGe Semiconductor Devices forCryogenic
Power Electronics

• ICMC/CEC August-September 2005Keystone, Colorado

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Outline
Authors and Sponsors Goals and Applications Why
SiGe? Designs and results SiGe heterojunction
diodes Cryogenic power converter Summary
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Outline
Authors and Sponsors Goals and Applications Why
SiGe? Designs and results SiGe heterojunction
diodes Cryogenic power converter Summary
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Authors
Rufus Ward, Bill Dawson, Lijun Zhu, Randall
Kirschman GPD Optoelectronics Corp., Salem, New
Hampshire Guofu Niu, Mark Nelms Auburn
University, Dept. of Electrical and Computer
Engineering, Auburn, Alabama Mike Hennessy,
Eduard Mueller, Otward Mueller, MTECH
Labs./LTE, Ballston Lake, New York
GPD Optoelectronics Corporation
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Sponsors
US Office of Naval Research US Army Aviation and
Missiles Command Defense Advanced Research
Projects Agency
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Outline
Authors and Sponsors Goals and Applications Why
SiGe? Designs and results SiGe heterojunction
diodes Cryogenic power converter Summary
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Goals

• Develop SiGe devices for cryogenic power use
• Exhibit the performance advantages of SiGe versus
  Si for cryogenic power
• Specifically
• Demonstrate prototype SiGe power diodes for
  cryogenic operation
• Demonstrate a 100-W power conversion circuit, to
  deep cryogenic temperatures.
• To 55 K

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Application Areas

• For power management and distribution (PMAD)
• Power conversion for storage and distribution
• Power conversion for motors/generators
• E.g. All-Electric ship
• DoD applications
• Cryogenic systems for ships and aerospace
• Propulsion systems
• Superconducting or cryogenic
• Temperature 60 65 K (for HTSC)

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Outline
Authors and Sponsors Goals and Applications Why
SiGe? Designs and results SiGe heterojunction
diodes Cryogenic power converter Summary
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Why SiGe?

• Can incorporate desirable characteristics of both
  Si and Ge
• Can optimize devices for cryogenic applications
  by selective use of Si and SiGe
• SiGe provides additional flexibility through
  band-gap engineering ( of Ge, grading) and
  selective placement
• All device types work at cryogenic temperatures
• Diodes
• Field-effect transistors
• Bipolar transistors
• Combinations of above (IGBTs, thyristors, ...)
• Devices can operate at all cryogenic
  temperatures (as low as 1 K if required)
• Compatible with conventional Si processing

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Outline
Authors and Sponsors Goals and Applications Why
SiGe? Designs and results SiGe heterojunction
diodes Cryogenic power converter Summary
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SiGe Diode Simulations
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SiGe Heterostructure Diode
Frontside contact
SiGe epilayer P
Si epilayer N
Si substrate N
Backside contact
(N backside implant)
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SiGe vs Si Diode Characteristics
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SiGe vs Si Forward Voltage
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SiGe vs Si and SiC Forward Voltage
SiGe
Univ. of Auburn measurements.
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SiGe vs Si Reverse Recovery
Univ. of Auburn measurements.
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SiGe vs Si Reverse Recovery
Univ. of Auburn measurements.
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SiGe vs Si Reverse Recovery
MTECH Labs. measurements.
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SiGe vs Si Reverse Recovery
MTECH Labs. measurements.
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Outline
Authors and Sponsors Goals and Applications Why
SiGe? Designs and results SiGe heterojunction
diodes Cryogenic power converter Summary
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SiGe Boost Converter
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SiGe 100 W Cryo Boost Converter100 kHz, 24 V in,
48 V out
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SiGe 100 W Cryo Boost ConverterBackside
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Cryostat for Measuring ?100 W Circuits
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100 W SiGe Power Converter in Cryostat
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SiGe vs Si diodes in 100 W Cryo Boost Converter
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Outline
Authors and Sponsors Goals and Applications Why
SiGe? Designs and results SiGe heterojunction
diodes Cryogenic power converter Summary
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Summary

• Cryogenic power conversion is of interest for a
  range of applications within DoD and elsewhere.
• For cryogenic power conversion, SiGe devices are
  potentially superior to devices based on Si or
  Ge.
• We are developing SiGe semiconductor devices for
  cryogenic power applications.
• We have simulated SiGe diodes results indicate
  improvements over Si diodes and have guided
  design.
• We have designed, fabricated, and used SiGe
  diodes (and HBTs) in power converters operating
  at cryogenic temperatures and converting gt100 W.

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Outline
Authors and Sponsors Goals and Applications Why
SiGe? Designs and results SiGe heterojunction
diodes Cryogenic power converter Summary