45 Dhbts PPTs View free & download

High current (100mA) InP/InGaAs/InP DHBTs with 330 GHz fmax PowerPoint PPT Presentation

High current (100mA) InP/InGaAs/InP DHBTs with 330 GHz fmax - Yun Wei, Sangmin Lee, Sundararajan Krishnan, Mattias ... bond to carrier wafer with solder. remove InP substrate. collector metal. collector recess etch ...

Yun Wei, Sangmin Lee, Sundararajan Krishnan, Mattias ... bond to carrier wafer with solder. remove InP substrate. collector metal. collector recess etch ...

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High speed (207 GHz ft), Low Thermal Resistance, High Current Density Metamorphic InP/InGaAs/InP DHBTs grown on a GaAs Substrate PowerPoint PPT Presentation

High speed (207 GHz ft), Low Thermal Resistance, High Current Density Metamorphic InP/InGaAs/InP DHBTs grown on a GaAs Substrate - High speed (207 GHz ft), Low Thermal Resistance, High Current Density ... Department of Electrical Engineering, Materials Department, ...

High speed (207 GHz ft), Low Thermal Resistance, High Current Density ... Department of Electrical Engineering, Materials Department, ...

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Selectively implanted subcollector DHBTs PowerPoint PPT Presentation

Selectively implanted subcollector DHBTs - Reduce lateral dimensions to decrease RC time constants ... 160 Gb/s fiber ICs, 300 GHz MMICs for communications, radar, & imaging ...

Reduce lateral dimensions to decrease RC time constants ... 160 Gb/s fiber ICs, 300 GHz MMICs for communications, radar, & imaging ...

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InAlAs/InGaAs/InP DHBTs with Polycrystalline InAs Extrinsic Emitter Regrowth PowerPoint PPT Presentation

InAlAs/InGaAs/InP DHBTs with Polycrystalline InAs Extrinsic Emitter Regrowth - RHEED or pyrometer. Second attempt with improved. pre-regrowth processing and ... RHEED/pyrometer features. added to the wafer. Base-emitter Regrowth SEM Detail ...

RHEED or pyrometer. Second attempt with improved. pre-regrowth processing and ... RHEED/pyrometer features. added to the wafer. Base-emitter Regrowth SEM Detail ...

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Current Density Limits in InP DHBTs: Collector Current Spreading and Effective Electron Velocity PowerPoint PPT Presentation

Current Density Limits in InP DHBTs: Collector Current Spreading and Effective Electron Velocity - Mesa DHBT with 0.6 mm emitter width, 0.5 mm base contact width. SI : InP. Substrate ... collector isolation by implant or regrowth (provide room for current spreading) ...

Mesa DHBT with 0.6 mm emitter width, 0.5 mm base contact width. SI : InP. Substrate ... collector isolation by implant or regrowth (provide room for current spreading) ...

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Ultra Wideband DHBTs using a Graded CarbonDoped InGaAs Base PowerPoint PPT Presentation

Ultra Wideband DHBTs using a Graded CarbonDoped InGaAs Base - Mattias Dahlstr m, Miguel Urteaga,Sundararajan Krishnan, Navin Parthasarathy, ... Pc is immeasurably low: below 10 7 cm-2. Critical for narrow base mesa HBT ...

Mattias Dahlstr m, Miguel Urteaga,Sundararajan Krishnan, Navin Parthasarathy, ... Pc is immeasurably low: below 10 7 cm-2. Critical for narrow base mesa HBT ...

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40 GHz MMIC Power Amplifier in InP DHBT Technology PowerPoint PPT Presentation

40 GHz MMIC Power Amplifier in InP DHBT Technology - f0=90 GHz. BW3dB=20 GHz. GT=8.2 dB. P1dB=9.5 dBm. Psat=12.5 dBm, associated gain: 4 dB ... designs for 100 mW saturated output power now being tested ...

f0=90 GHz. BW3dB=20 GHz. GT=8.2 dB. P1dB=9.5 dBm. Psat=12.5 dBm, associated gain: 4 dB ... designs for 100 mW saturated output power now being tested ...

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Developing Bipolar Transistors for Sub-mm-Wave Amplifiers and Next-Generation (300 GHz) Digital Circuits PowerPoint PPT Presentation

Developing Bipolar Transistors for Sub-mm-Wave Amplifiers and Next-Generation (300 GHz) Digital Circuits - Title: asdfasdfasdf Author: mark rodwell Last modified by: mark rodwell Created Date: 10/26/2004 5:47:06 PM Document presentation format: On-screen Show

Title: asdfasdfasdf Author: mark rodwell Last modified by: mark rodwell Created Date: 10/26/2004 5:47:06 PM Document presentation format: On-screen Show

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Indium Phosphide Bipolar Integrated Circuits: 40 GHz and beyond PowerPoint PPT Presentation

Indium Phosphide Bipolar Integrated Circuits: 40 GHz and beyond - Mesa processes with non-self-aligned base contacts: ... in cheap GaAs HBT foundry processes. 174 GHz, 6.3 dB, Single-Transistor Amplifier ...

Mesa processes with non-self-aligned base contacts: ... in cheap GaAs HBT foundry processes. 174 GHz, 6.3 dB, Single-Transistor Amplifier ...

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Miguel Urteaga PowerPoint PPT Presentation

Miguel Urteaga - Title: Title of Presentation Author: rodwell Keywords: HBT presentation Last modified by: mark rodwell Created Date: 11/10/1998 11:39:01 PM Document presentation format

Title: Title of Presentation Author: rodwell Keywords: HBT presentation Last modified by: mark rodwell Created Date: 11/10/1998 11:39:01 PM Document presentation format

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Scaling of High Frequency III-V Transistors - Scaling of High Frequency IIIV Transistors

Scaling of High Frequency IIIV Transistors

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Frequency Limits of Bipolar Integrated Circuits PowerPoint PPT Presentation

Frequency Limits of Bipolar Integrated Circuits - Electrical characterization, metallurgical investigation, and thermal stability ... Gain.under large-signal conditions ...gain is less than MAG/MSG... Breakdown ...

Electrical characterization, metallurgical investigation, and thermal stability ... Gain.under large-signal conditions ...gain is less than MAG/MSG... Breakdown ...

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Submicron InP Bipolar Transistors: Scaling Laws, Technology Roadmaps, Advanced Fabrication Processes PowerPoint PPT Presentation

Submicron InP Bipolar Transistors: Scaling Laws, Technology Roadmaps, Advanced Fabrication Processes - Submicron InP Bipolar Transistors: Scaling Laws, ... nonplanar device - low yield. low integration scales. InP HBT limits to yield: non-planar process ...

Submicron InP Bipolar Transistors: Scaling Laws, ... nonplanar device - low yield. low integration scales. InP HBT limits to yield: non-planar process ...

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Indium Phosphide and Related Materials Conference, 2005 PowerPoint PPT Presentation

Indium Phosphide and Related Materials Conference, 2005 - Department of Electrical and Computer Engineering ... 119 Technology Drive, Bethlehem, PA 18015 ... Table 3 -- Thermal data, 42 nm transition. Simulated band ...

Department of Electrical and Computer Engineering ... 119 Technology Drive, Bethlehem, PA 18015 ... Table 3 -- Thermal data, 42 nm transition. Simulated band ...

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Transistor and Circuit Design for 100-200 GHz ICs PowerPoint PPT Presentation

Transistor and Circuit Design for 100-200 GHz ICs - Transistor and Circuit Design for 100-200 GHz ICs Mark Rodwell University of California, Santa Barbara V. Paidi, Z. Griffith, D. Scott, Y. Dong, M. Dahlstr m, Y. Wei ...

Transistor and Circuit Design for 100-200 GHz ICs Mark Rodwell University of California, Santa Barbara V. Paidi, Z. Griffith, D. Scott, Y. Dong, M. Dahlstr m, Y. Wei ...

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200 GHz fmax, ft InP/In0.53Ga0.47As/InP Metamorphic Double Heterojunction Bipolar Transistors on GaAs Substrates PowerPoint PPT Presentation

200 GHz fmax, ft InP/In0.53Ga0.47As/InP Metamorphic Double Heterojunction Bipolar Transistors on GaAs Substrates - Title: Indium Phosphide Bipolar Integrated Circuits: 40 GHz and beyond Author: kymdow Last modified by: Eliazer Martinez Created Date: 5/8/2003 9:31:02 PM

Title: Indium Phosphide Bipolar Integrated Circuits: 40 GHz and beyond Author: kymdow Last modified by: Eliazer Martinez Created Date: 5/8/2003 9:31:02 PM

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InP Bipolar Transistors: High Speed Circuits and Manufacturable Submicron Fabrication Processes PowerPoint PPT Presentation

InP Bipolar Transistors: High Speed Circuits and Manufacturable Submicron Fabrication Processes - Title: Indium Phosphide Bipolar Integrated Circuits: 40 GHz and beyond Author: mark rodwell Last modified by: mark rodwell Created Date: 5/23/2003 5:13:26 PM

Title: Indium Phosphide Bipolar Integrated Circuits: 40 GHz and beyond Author: mark rodwell Last modified by: mark rodwell Created Date: 5/23/2003 5:13:26 PM

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Frequency Limits of InP-based Integrated Circuits PowerPoint PPT Presentation

Frequency Limits of InP-based Integrated Circuits - P. Asbeck, A. Kummel, Y. Taur, University of California San Diego. J. Harris, P. McIntyre, ... Plenary, Indium Phosphide and Related Materials Conference, May ...

P. Asbeck, A. Kummel, Y. Taur, University of California San Diego. J. Harris, P. McIntyre, ... Plenary, Indium Phosphide and Related Materials Conference, May ...

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High speed InP-based heterojunction bipolar transistors PowerPoint PPT Presentation

High speed InP-based heterojunction bipolar transistors - High speed InP-based heterojunction bipolar transistors Mark Rodwell University of California, Santa Barbara rodwell@ece.ucsb.edu 805-893-3244, 805-893-3262 fax

High speed InP-based heterojunction bipolar transistors Mark Rodwell University of California, Santa Barbara rodwell@ece.ucsb.edu 805-893-3244, 805-893-3262 fax

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185 GHz Monolithic Amplifier in InGaAs/InAlAs Transferred-Substrate HBT Technology PowerPoint PPT Presentation

185 GHz Monolithic Amplifier in InGaAs/InAlAs Transferred-Substrate HBT Technology - urteaga@ece.ucsb.edu 1-805-893-8044 IMS2001 May 2001, Phoenix, AZ. Outline. IMS2001 ... Sub-micron scaling of emitter and collector widths has resulted in ...

urteaga@ece.ucsb.edu 1-805-893-8044 IMS2001 May 2001, Phoenix, AZ. Outline. IMS2001 ... Sub-micron scaling of emitter and collector widths has resulted in ...

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InP HBT Digital ICs and MMICs in the 140-220 GHz band - InP HBT Digital ICs and MMICs in the 140220 GHz band

InP HBT Digital ICs and MMICs in the 140220 GHz band

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Ultra High Speed InP Heterojunction Bipolar Transistors PowerPoint PPT Presentation

Ultra High Speed InP Heterojunction Bipolar Transistors - Mattias Dahlstr m Trouble is my business, (Raymond Chandler) Ultra High Speed InP Heterojunction Bipolar Transistors Introduction to HBT s How to make a fast HBT

Mattias Dahlstr m Trouble is my business, (Raymond Chandler) Ultra High Speed InP Heterojunction Bipolar Transistors Introduction to HBT s How to make a fast HBT

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Indium Phosphide Bipolar Integrated Circuits: 40 GHz and beyond - by thinning the collector while increasing current. Challenges with Scaling ... Compromise: physically undercut the collector semiconductor. Emitter Ohmic Resistivity: ...

by thinning the collector while increasing current. Challenges with Scaling ... Compromise: physically undercut the collector semiconductor. Emitter Ohmic Resistivity: ...

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50-200 GHz InP HBT Integrated Circuits for Optical Fiber and mm-Wave Communications PowerPoint PPT Presentation

50-200 GHz InP HBT Integrated Circuits for Optical Fiber and mm-Wave Communications - for Optical Fiber and ... HBT S12 is very small Standard 12-term VNA calibrations ... For a BPSK point-point digital microwave radio link. Ptransmitter. transmission.

for Optical Fiber and ... HBT S12 is very small Standard 12-term VNA calibrations ... For a BPSK point-point digital microwave radio link. Ptransmitter. transmission.

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Device Research Conference, 2005 PowerPoint PPT Presentation

Device Research Conference, 2005 - Department of Electrical and Computer Engineering. University of California, Santa Barbara, CA, 93106-9560 ... IEEE Electron Device Letters, Vol. 26, Jan 2005 ...

Department of Electrical and Computer Engineering. University of California, Santa Barbara, CA, 93106-9560 ... IEEE Electron Device Letters, Vol. 26, Jan 2005 ...

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InP HBTs: Process Technologies and Integrated Circuits PowerPoint PPT Presentation

InP HBTs: Process Technologies and Integrated Circuits - ... P P P P P P P P P P P P P P P P P P P P P P P P PPP P P P P P P P P ... 456789:CDEFGHIJSTUVWXYZcdefghijstuvwxyz GpSs tFTO ...

... P P P P P P P P P P P P P P P P P P P P P P P P PPP P P P P P P P P ... 456789:CDEFGHIJSTUVWXYZcdefghijstuvwxyz GpSs tFTO ...

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Wband InPInGaAsInP DHBT MMIC Power Amplifiers PowerPoint PPT Presentation

Wband InPInGaAsInP DHBT MMIC Power Amplifiers - f0=90 GHz, BW3dB=20 GHz, GT=8.2 dB, P1dB=9.5 dBm, Psat=12.5 dBm ... Wideband Power amplifiers: f0=85 GHz, BW3dB=28 GHz,GT=8.5 dB, Psat=16dBm. Future work ...

f0=90 GHz, BW3dB=20 GHz, GT=8.2 dB, P1dB=9.5 dBm, Psat=12.5 dBm ... Wideband Power amplifiers: f0=85 GHz, BW3dB=28 GHz,GT=8.5 dB, Psat=16dBm. Future work ...

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Ultra high speed heterojunction bipolar transistor technology PowerPoint PPT Presentation

Ultra high speed heterojunction bipolar transistor technology - Ultra high speed heterojunction bipolar transistor technology. Mark Rodwell ... cheap 1 GHz PCs, cheap 20 GHz TV. electronics gets ~10:1 faster each decade ...

Ultra high speed heterojunction bipolar transistor technology. Mark Rodwell ... cheap 1 GHz PCs, cheap 20 GHz TV. electronics gets ~10:1 faster each decade ...

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IEEE Bipolar/BiCMOS Circuits and Technology Meeting PowerPoint PPT Presentation

IEEE Bipolar/BiCMOS Circuits and Technology Meeting - Ultra High Frequency Static Dividers 150 GHz in a Narrow Mesa InGaAs/InP DHBT Technology Zach Griffith, Mattias Dahlstr m, and Mark J.W. Rodwell

Ultra High Frequency Static Dividers 150 GHz in a Narrow Mesa InGaAs/InP DHBT Technology Zach Griffith, Mattias Dahlstr m, and Mark J.W. Rodwell

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InP Bipolar Transistors: High Speed Circuits and Manufacturable Submicron Fabrication Processes - rodwell@ece.ucsb.edu 805-893-3244, 805-893-5705 fax. 2003 European GaAs IC Conference, ... Wave Power: InP a leading contender. unsurpassed combination of bandwidth and breakdown ...

rodwell@ece.ucsb.edu 805-893-3244, 805-893-5705 fax. 2003 European GaAs IC Conference, ... Wave Power: InP a leading contender. unsurpassed combination of bandwidth and breakdown ...

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On the Feasibility of FewTHz Bipolar Transistors PowerPoint PPT Presentation

On the Feasibility of FewTHz Bipolar Transistors - unclear if Si MOSFETs will work well at sub-22-nm gate length ... New Emitter Process for 128 and 64 nm junctions. dry etched metal. dry etched junction ...

unclear if Si MOSFETs will work well at sub-22-nm gate length ... New Emitter Process for 128 and 64 nm junctions. dry etched metal. dry etched junction ...

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IEEE BipolarBiCMOS Circuits and Technology Meeting - Department of Electrical and Computer Engineering ... Present efforts in InP HBT research community ... Collector capacitance charging time when switching...

Department of Electrical and Computer Engineering ... Present efforts in InP HBT research community ... Collector capacitance charging time when switching...

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THz - Schottky diodes, photodiodes, photo mixers, RTDs, ... high current density, ... S.R. Bank, NAMBE , 2006. Epitaxially formed, no surface defects, no Fermi level pinning ...

Schottky diodes, photodiodes, photo mixers, RTDs, ... high current density, ... S.R. Bank, NAMBE , 2006. Epitaxially formed, no surface defects, no Fermi level pinning ...

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W-band InP/InGaAs/InP DHBT MMIC Power Amplifiers - DHBT MMIC Power Amplifiers Yun Wei, Sangmin Lee, Sundararajan Krishnan, Mattias Dahlstr m, Miguel Urteaga, Mark Rodwell Department of Electrical and Computer ...

DHBT MMIC Power Amplifiers Yun Wei, Sangmin Lee, Sundararajan Krishnan, Mattias Dahlstr m, Miguel Urteaga, Mark Rodwell Department of Electrical and Computer ...

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Characteristics of Submicron HBTs in the 140-220 GHz Band PowerPoint PPT Presentation

Characteristics of Submicron HBTs in the 140-220 GHz Band - Urteaga et al, 2001 Device Research Conference, June, Notre Dame, Illinois ... 2001 Device Research Conference, June, Notre Dame, Illinois. Emitter: 0.3 x 18 ...

Urteaga et al, 2001 Device Research Conference, June, Notre Dame, Illinois ... 2001 Device Research Conference, June, Notre Dame, Illinois. Emitter: 0.3 x 18 ...

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Use of Millimeter Waves LAN (mmwLAN) for Enterprise Applications PowerPoint PPT Presentation

Use of Millimeter Waves LAN (mmwLAN) for Enterprise Applications - Technology Objective ... Standard In Evolution Ethernet s Past & Future Growth of Gigabit Ethernet ... Deploying Gigabit Ethernet To The Desktop: Drivers and ...

Technology Objective ... Standard In Evolution Ethernet s Past & Future Growth of Gigabit Ethernet ... Deploying Gigabit Ethernet To The Desktop: Drivers and ...

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280 GHz fT InP DHBT with 1.2 mm2 base-emitter junction area in MBE Regrown-Emitter Technology PowerPoint PPT Presentation

280 GHz fT InP DHBT with 1.2 mm2 base-emitter junction area in MBE Regrown-Emitter Technology - Tel: (704)319-2033; ywei@rfmd.com. Motivation for Regrown-Emitter HBT: InP vs. Si/SiGe ... 4 inch Si wafer uniformity testing. refractive index measurement ...

Tel: (704)319-2033; ywei@rfmd.com. Motivation for Regrown-Emitter HBT: InP vs. Si/SiGe ... 4 inch Si wafer uniformity testing. refractive index measurement ...

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III-V HBT device physics: what to include in future compact models PowerPoint PPT Presentation

III-V HBT device physics: what to include in future compact models - University of California, Santa Barbara. Workshop on Compact Modeling for RF-Microwave Applications, Oct.. 3, ... Camnitz and Moll, Betser & Ritter, D. Root ...

University of California, Santa Barbara. Workshop on Compact Modeling for RF-Microwave Applications, Oct.. 3, ... Camnitz and Moll, Betser & Ritter, D. Root ...

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Low Leakage and High Speed InPIn0.53Ga0.47AsInP Metamorphic Double Heterojunction Bipolar Transistor PowerPoint PPT Presentation

Low Leakage and High Speed InPIn0.53Ga0.47AsInP Metamorphic Double Heterojunction Bipolar Transistor - Department of Electrical Engineering, Materials Department, ... Develop InP-based HBTs for Naval Radar/Comms ICs. better device bandwidth & breakdown than GaAs ...

Department of Electrical Engineering, Materials Department, ... Develop InP-based HBTs for Naval Radar/Comms ICs. better device bandwidth & breakdown than GaAs ...

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87 GHz Static Frequency Divider in an InPbased Mesa DHBT Technology PowerPoint PPT Presentation

87 GHz Static Frequency Divider in an InPbased Mesa DHBT Technology - 87 GHz Static Frequency Divider in an InP-based Mesa DHBT Technology ... resynchronizes data to clock. often sets system maximum clock ...

87 GHz Static Frequency Divider in an InP-based Mesa DHBT Technology ... resynchronizes data to clock. often sets system maximum clock ...

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Process Technologies For Sub-100-nm InP HBTs PowerPoint PPT Presentation

Process Technologies For Sub-100-nm InP HBTs - ... very high capacitance density Transistor & IC thermal ... Electrostatics Slide 15 Slide 16 Process flow* Slide 18 Slide 19 Raised vs ...

... very high capacitance density Transistor & IC thermal ... Electrostatics Slide 15 Slide 16 Process flow* Slide 18 Slide 19 Raised vs ...

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mmWave IC Design: The Transition from IIIV to CMOS Circuit Techniques - mmWave IC Design: The Transition from IIIV to CMOS Circuit Techniques

mmWave IC Design: The Transition from IIIV to CMOS Circuit Techniques

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An 8GHz ContinuousTime SD ADC - An 8GHz ContinuousTime SD ADC

An 8GHz ContinuousTime SD ADC

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DHBT With Esaki Base Emitter Junction having a 60 nm Wide Emitter Contact PowerPoint PPT Presentation

DHBT With Esaki Base Emitter Junction having a 60 nm Wide Emitter Contact - Concentration (cm-3) Depth (nm) ... tunneling current did not degrade the gain of the device at high current density. Low Vpeak values were found. ...

Concentration (cm-3) Depth (nm) ... tunneling current did not degrade the gain of the device at high current density. Low Vpeak values were found. ...

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TFAST - Department of Electrical and Computer Engineering ... This work was supported under by the Office of Naval Research, program N00014-01-1-0065 ...

Department of Electrical and Computer Engineering ... This work was supported under by the Office of Naval Research, program N00014-01-1-0065 ...

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Dhbts PowerPoint PPT Presentations