Title: ECE 425 VLSI Circuit Design
1ECE 425 - VLSI Circuit Design
- Lecture 7 - Combinational Logic Design
- February 16, 2004
Prof. John NestorECE DepartmentLafayette
CollegeEaston, Pennsylvania 18042nestorj_at_lafayet
te.edu
2Announcements
- Entry Exam Due Today
- Homework due Wednesday 2/18
- 2-2, 2-5, 2-6, , 2-7, 2-8, 2-9, 2-10, 2-13, 2-18
- Problem 2-13 hints
- Assume VDD / p-transistors in top half,
- Gnd / n-transistors in bottom half
- Reading
- Wolf 2.1-2.6, 3.1-3.4
- Office Hours
- MWF 1-2
- R 10-12
3Where we are...
- Last Time
- ASIC Design
- Standard Cells
- Gate Arrrays
- FPGAs
- Today
- Combinational Logic Design
- Static CMOS Delay, Noise Margin Power
4Review Boolean Algebra
- Axioms - basic properties assumed to be true
- (A1) X if X?1 (A1) X1 if X?0
- (A2) if (X0) then X1 (A2) if (X1) then
X0 - (A3) 000 (A3) 111
- (A4) 111 (A4) 000
- (A5) 01100 (A5) 10011
- Axioms establish
- Possible values (0, 1)
- Definitions of operations AND (), OR (), NOT()
5Review Boolean Algebra (contd)
- Theorems useful properties proved from axioms
- Some example theorems
- (T1) X0X (T1) X1X Identities
- (T2) X11 (T2) X00 Null elements
- (T3) XXX (T3) XXX Idempotency
- (T4) (X)X Involution
- (T5) XX1 (T4) XX0 Complements
- (T6) XYYX (T6) XYYX Commutativity
- (T7) (XY)ZX(YZ) Associativity
- (T7) (XY)ZX(YZ)
- (T8) XYXZ X(YZ) Distributivity
- (T8) (XY)(XZ) XYZ
6Review Boolean Algebra (contd)
- More theorems
- (T9) XXYX (T9) X(XY)X Covering
- (T10) XYXYX Combining
- (T10) (XUY)(XY)X
- (T11) XY XZ YZ XY XZ Consensus
- (T11) (XY)(XZ)(YZ) (XY)(XZ)
- (T13) (XY) X Y DeMorgan
- (T13) (XY) X Y
- For more information
- Consult your logic design (ECE 211-212) notes, or
- See a logic design text, such as
- J. Wakerly, Digital Design, Principles and
Practices 2nd. Ed., Prentice-Hall, 1994
7Logic Expressions
- Operators
- AND ab a b
- OR a b
- NAND a b
- XOR a Å b ab ab
- Literals - appearance of input variables
- unverted a
- inverted a'
8Completeness
- A set of logical functions is complete if we can
generate every possible Boolean function using
that set - The set AND, OR, NOT is complete
- The set NAND is complete
- The set AND, OR is not complete
9Irredundancy
- A logical expression is irredundant if no literal
can be removed from the expression without
changings its value - Redundant expressions
- ab a
- ab ab'
- Irredundant expressions
- ab' a'b
- a cd'
10Minimality
- A logic expression is minimal if no equivalent
form has a higher cost (i.e., literal count) - Minimality ? Irredundancy
- CAD tools are available to find the minimal (or
near-minimal) form for - Two level logic (AND/OR Sum of Products)
- Multilevel Logic (Arbitrary network of gates)
11Review - Complementary CMOS
- Pullup Network - drives output to VDD
- Pulldown Network - drives output to GND
12Complementary CMOS Notes
- Pullup, pulldown networks should NEVER conduct at
same time! - Pullup, pulldown networks are duals
- Parallel in pulldown implies serial in pullup
- Serial in pulldown implies parallel in pullup
- Gate Types
- Simple NAND, NOR, inverter
- And-Or-Invert (AOI)
- Or-And-Invert (OAI)
13Layout Considerations
- Metal lines required for Vdd!, Gnd!
- ndiff, pdiff must be separated by 10 lambda
- Transistor options
- horizontal or vertical diffusion lines
- Start with minimum-size transistors
- Increased width implies increased driving
capability, but - Do the analysis first to see if its necessary
14Layout Considerations (cont'd)
- Interconnect layers (use vias when necessary)
- Metal 1
- Metal 2
- Poly
- Diffusion
- Specify a well depending on process type
- Use substrate contacts to bias transistors
prevent latchup
15Layout Example - NAND
- Compare to Fig 3-10, p. 122
- Differences from Magic
- Explicit contact cuts
- P-tub as well as N-tub
- Larger N-well
- Note transistor sizes
- Note substrate contacts
16Layout Example - NOR
- Compare to Fig 3-12, p. 123
- Differences from Magic
- Explicit contact cuts
- P-tub as well as N-tub
- Larger N-well
- Note transistor sizes
- Note substrate contacts
17Layout - Creating Wide Transistors
- Divide into multiple transistors
- Tie together sources, drains
- Compare to Fig 3-9, p. 121
- Missing but still needed substrate contacts
18Review - CMOS Gate Structure
19Inverter - DC Analysis
in
out
20Inverter DC Analysis - Continued
Note dependence on bn/bp Recall
Source N. Weste K. Eshraghian, Principles of
CMOS VLSI Design Addison Wesley, 1992
21Logic Levels Output
- Logic values are represented by a range of
voltages - Logic 1 between VOH and VDD (5V)
- Logic 0 between VOL and VSS (0V)
- Static CMOS Output levels
- VOH VDD (5V)
- VOL VSS Gnd (0V)
22Logic Levels Input
- Examine DC Input/Output Curve (Fig 3-15, p. 120)
- Pick points where slope -1 as VIL , VIH
- Rationale compare change in VIN , VOUT
- VIN lt VIL - small change in VIN causes small
change in VOUT - VIN gt VOUT - small change in VIN causes small
change in VOUT - VIN lt VIL lt VIH - small change in VIN causes
large change in VOUT
23Logic Levels - Summary
24Noise Margin
- A measure of noise immunity
- Logic 1 NMH VOH - VIH
- Logic 0 NML VOL - VIL
- Important when noise is present
- Definition small random variations in voltage
- Dont want noise to affect circuit output
25Transistor Sizing and Noise Margin
- Changing beta (size) ratio changes VIH, VIL
- To balance noise margin
- Make bnbp gt Wp3.5Wn
- Actually, Wp2Wn is often good enough
26Gate Delay
- Consider an inverter with "step function" input
- Delay related to time to discharge / charge CL
27Simplifying Assumptions
- Assume transistors turn on/off instantaneously
- Model transistor as a switch, resistor in series
- Resistor approximates Vds/Id at different values
of Vds - (See Fig. 2-6, p. 45 Fig 3-17, p. 123, Fig. 3-18,
p. 123) - Use average of Vds/Id at
- middle of linear region Vlin 0.5(Vds - Vss -
Vt) - maximum of saturation region Vsat (Vds - Vss)
28Delay Calculation - Finding Rn
29Delay Calculation - Finding Rn
Table 3-1, p. 130 (0.5µm process, VDD5V) Rn
3.9k? Rp 14k?
30Calculating Rn, Rp
8.02k?
13.72k?
28.25k?
44.15k?
31Coming Up
- Body effect
- Power Consumption
- Power-speed product
- Parasitics and delay