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ECE 425 VLSI Circuit Design

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Axioms - basic properties assumed to be true (A1) X= if X1 (A1' ... AMIS 1.5 m: k'p=-11.4 A/V2 Vtp=-1.02V. k'n= 34.2 A/V2 Vtn=0.61V. Rn. Rp. VDD=5V. VDD=3.3V ... – PowerPoint PPT presentation

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Title: ECE 425 VLSI Circuit Design


1
ECE 425 - VLSI Circuit Design
  • Lecture 7 - Combinational Logic Design
  • February 16, 2004

Prof. John NestorECE DepartmentLafayette
CollegeEaston, Pennsylvania 18042nestorj_at_lafayet
te.edu
2
Announcements
  • Entry Exam Due Today
  • Homework due Wednesday 2/18
  • 2-2, 2-5, 2-6, , 2-7, 2-8, 2-9, 2-10, 2-13, 2-18
  • Problem 2-13 hints
  • Assume VDD / p-transistors in top half,
  • Gnd / n-transistors in bottom half
  • Reading
  • Wolf 2.1-2.6, 3.1-3.4
  • Office Hours
  • MWF 1-2
  • R 10-12

3
Where we are...
  • Last Time
  • ASIC Design
  • Standard Cells
  • Gate Arrrays
  • FPGAs
  • Today
  • Combinational Logic Design
  • Static CMOS Delay, Noise Margin Power

4
Review Boolean Algebra
  • Axioms - basic properties assumed to be true
  • (A1) X if X?1 (A1) X1 if X?0
  • (A2) if (X0) then X1 (A2) if (X1) then
    X0
  • (A3) 000 (A3) 111
  • (A4) 111 (A4) 000
  • (A5) 01100 (A5) 10011
  • Axioms establish
  • Possible values (0, 1)
  • Definitions of operations AND (), OR (), NOT()

5
Review Boolean Algebra (contd)
  • Theorems useful properties proved from axioms
  • Some example theorems
  • (T1) X0X (T1) X1X Identities
  • (T2) X11 (T2) X00 Null elements
  • (T3) XXX (T3) XXX Idempotency
  • (T4) (X)X Involution
  • (T5) XX1 (T4) XX0 Complements
  • (T6) XYYX (T6) XYYX Commutativity
  • (T7) (XY)ZX(YZ) Associativity
  • (T7) (XY)ZX(YZ)
  • (T8) XYXZ X(YZ) Distributivity
  • (T8) (XY)(XZ) XYZ

6
Review Boolean Algebra (contd)
  • More theorems
  • (T9) XXYX (T9) X(XY)X Covering
  • (T10) XYXYX Combining
  • (T10) (XUY)(XY)X
  • (T11) XY XZ YZ XY XZ Consensus
  • (T11) (XY)(XZ)(YZ) (XY)(XZ)
  • (T13) (XY) X Y DeMorgan
  • (T13) (XY) X Y
  • For more information
  • Consult your logic design (ECE 211-212) notes, or
  • See a logic design text, such as
  • J. Wakerly, Digital Design, Principles and
    Practices 2nd. Ed., Prentice-Hall, 1994

7
Logic Expressions
  • Operators
  • AND ab a b
  • OR a b
  • NAND a b
  • XOR a Å b ab ab
  • Literals - appearance of input variables
  • unverted a
  • inverted a'

8
Completeness
  • A set of logical functions is complete if we can
    generate every possible Boolean function using
    that set
  • The set AND, OR, NOT is complete
  • The set NAND is complete
  • The set AND, OR is not complete

9
Irredundancy
  • A logical expression is irredundant if no literal
    can be removed from the expression without
    changings its value
  • Redundant expressions
  • ab a
  • ab ab'
  • Irredundant expressions
  • ab' a'b
  • a cd'

10
Minimality
  • A logic expression is minimal if no equivalent
    form has a higher cost (i.e., literal count)
  • Minimality ? Irredundancy
  • CAD tools are available to find the minimal (or
    near-minimal) form for
  • Two level logic (AND/OR Sum of Products)
  • Multilevel Logic (Arbitrary network of gates)

11
Review - Complementary CMOS
  • Pullup Network - drives output to VDD
  • Pulldown Network - drives output to GND

12
Complementary CMOS Notes
  • Pullup, pulldown networks should NEVER conduct at
    same time!
  • Pullup, pulldown networks are duals
  • Parallel in pulldown implies serial in pullup
  • Serial in pulldown implies parallel in pullup
  • Gate Types
  • Simple NAND, NOR, inverter
  • And-Or-Invert (AOI)
  • Or-And-Invert (OAI)

13
Layout Considerations
  • Metal lines required for Vdd!, Gnd!
  • ndiff, pdiff must be separated by 10 lambda
  • Transistor options
  • horizontal or vertical diffusion lines
  • Start with minimum-size transistors
  • Increased width implies increased driving
    capability, but
  • Do the analysis first to see if its necessary

14
Layout Considerations (cont'd)
  • Interconnect layers (use vias when necessary)
  • Metal 1
  • Metal 2
  • Poly
  • Diffusion
  • Specify a well depending on process type
  • Use substrate contacts to bias transistors
    prevent latchup

15
Layout Example - NAND
  • Compare to Fig 3-10, p. 122
  • Differences from Magic
  • Explicit contact cuts
  • P-tub as well as N-tub
  • Larger N-well
  • Note transistor sizes
  • Note substrate contacts

16
Layout Example - NOR
  • Compare to Fig 3-12, p. 123
  • Differences from Magic
  • Explicit contact cuts
  • P-tub as well as N-tub
  • Larger N-well
  • Note transistor sizes
  • Note substrate contacts

17
Layout - Creating Wide Transistors
  • Divide into multiple transistors
  • Tie together sources, drains
  • Compare to Fig 3-9, p. 121
  • Missing but still needed substrate contacts

18
Review - CMOS Gate Structure
19
Inverter - DC Analysis
in
out
20
Inverter DC Analysis - Continued
Note dependence on bn/bp Recall
Source N. Weste K. Eshraghian, Principles of
CMOS VLSI Design Addison Wesley, 1992
21
Logic Levels Output
  • Logic values are represented by a range of
    voltages
  • Logic 1 between VOH and VDD (5V)
  • Logic 0 between VOL and VSS (0V)
  • Static CMOS Output levels
  • VOH VDD (5V)
  • VOL VSS Gnd (0V)

22
Logic Levels Input
  • Examine DC Input/Output Curve (Fig 3-15, p. 120)
  • Pick points where slope -1 as VIL , VIH
  • Rationale compare change in VIN , VOUT
  • VIN lt VIL - small change in VIN causes small
    change in VOUT
  • VIN gt VOUT - small change in VIN causes small
    change in VOUT
  • VIN lt VIL lt VIH - small change in VIN causes
    large change in VOUT

23
Logic Levels - Summary
24
Noise Margin
  • A measure of noise immunity
  • Logic 1 NMH VOH - VIH
  • Logic 0 NML VOL - VIL
  • Important when noise is present
  • Definition small random variations in voltage
  • Dont want noise to affect circuit output

25
Transistor Sizing and Noise Margin
  • Changing beta (size) ratio changes VIH, VIL
  • To balance noise margin
  • Make bnbp gt Wp3.5Wn
  • Actually, Wp2Wn is often good enough

26
Gate Delay
  • Consider an inverter with "step function" input
  • Delay related to time to discharge / charge CL

27
Simplifying Assumptions
  • Assume transistors turn on/off instantaneously
  • Model transistor as a switch, resistor in series
  • Resistor approximates Vds/Id at different values
    of Vds
  • (See Fig. 2-6, p. 45 Fig 3-17, p. 123, Fig. 3-18,
    p. 123)
  • Use average of Vds/Id at
  • middle of linear region Vlin 0.5(Vds - Vss -
    Vt)
  • maximum of saturation region Vsat (Vds - Vss)

28
Delay Calculation - Finding Rn
29
Delay Calculation - Finding Rn
Table 3-1, p. 130 (0.5µm process, VDD5V) Rn
3.9k? Rp 14k?
30
Calculating Rn, Rp
8.02k?
13.72k?
28.25k?
44.15k?
31
Coming Up
  • Body effect
  • Power Consumption
  • Power-speed product
  • Parasitics and delay
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