Bulk CMOS Process Description

1
Bulk CMOS Process Description

• N-well process
• Single Metal Only Depicted
• Double Poly
• Prepared by Randy Geiger, September 2001

2
Components Shown

• n-channel MOSFET
• p-channel MOSFET
• Poly Resistor
• Doubly Poly Capacitor

3
D
C
A
A
B
B
C
D
4
Consider Basic Components Only

• Well Contacts and Guard Rings Will be Discussed
  Later

5
A
A
B
B
6
A
A
B
B
7
A
A
B
B
8
A
A
B
B
9
A
A
B
B
10
N-well Mask
A
A
B
B
11
N-well Mask
A
A
B
B
12
Detailed Description of First Photolithographic
Steps Only

• Top View
• Cross-Section View

13


Blank Wafer
Implant
Photoresist
n-well Mask
p-doped Substrate
Expose
Develop
14
Photoresist
N-well Mask
Exposure
Develop
A-A Section
B-B Section
15
Implant
A-A Section
B-B Section
16
N-well Mask
A-A Section
B-B Section
17
Active Mask
A
A
B
B
18
Active Mask
A
A
B
B
19
Active Mask
A-A Section
B-B Section
20
Poly1 Mask
A
A
B
B
21
Poly1 Mask
A
A
B
B
22
A
A
B
B
23
Poly 1 Mask
A-A Section
B-B Section
24
Poly 2 Mask
A
A
B
B
25
Poly 2 Mask
A
A
B
B
26
Poly 2 Mask
A-A Section
B-B Section
27
P-Select
A
A
B
B
28
P-Select
A
A
B
B
29
P-Select Mask n-diffusion
A-A Section
n-diffusion
B-B Section
30
P-Select Mask p-diffusion
A-A Section
p-diffusion
B-B Section
31
Contact Mask
A
A
B
B
32
Contact Mask
A
A
B
B
33
Contact Mask
A-A Section
B-B Section
34
Metal 1 Mask
A
A
B
B
35
Metal 1 Mask
A
A
B
B
36
Metal Mask
A-A Section
B-B Section
37
A
A
B
B
38
A
A
B
B
39
D
C
A
A
B
B
C
D
40
Thats all folks!