The new P-channel devices offer on-state resistance (RDS(on)) from 4.6 mOhm up to 59 mOhm to match a wide range of power requirements. P-channel MOSFETs eliminate the need for level shifting or charge pump circuitries making them a highly desirable

1
PRESS RELEASE
SO-8 -30V P-Channel Power MOSFET Product Family
DATA SHEETS
The new P-channel devices offer on-state
resistance (RDS(on)) from 4.6 mOhm up to 59 mOhm
to match a wide range of power requirements.
P-channel MOSFETs eliminate the need for level
shifting or charge pump circuitries making them a
highly desirable solution for system/load switch
applications.
HI-RES GRAPHIC
MOSFET HOME PAGE

• Features
• Industry-standard pin-out makes these devices
  multi-vendor compatible
• RoHS compliant containing no lead, no bromide and
  no halogen make these devices environmentally
  friendly
• MSL.1, consumer qualification level insures
  increased reliability

• Advantages
• The new SO-8 P-channel MOSFET family delivers a
  strong improvement in current handling compared
  to previous generation devices to offer customers
  a wide range of RDS(on) options to suit their
  thermal and cost requirements while the P-channel
  technology helps simplify circuit design.
• The P-channel MOSFETs offer lower cost for the
  same RDS(on) or much lower RDS(on) for the same
  die size compared to previous generation devices.

September 2010