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High Frequency Radiation Weapon

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Crystallizing dishes marked for sulfuric acid and hydrogen peroxide are used to clean the wafers Place wafer into ... Begin deposition Record pressure at start ... – PowerPoint PPT presentation

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Title: High Frequency Radiation Weapon


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High Frequency Radiation Weapon
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The first process to be doneWafer Cleaning
  • Wafers must be free of contamination at all
    stages of the antenna fabrication process
  • Wafers are cleaned in a strong acid and rinsed in
    DI water
  • Safety glasses and chemical gloves are required
    for this step
  • Once cleaned, wafers are ready for the next
    process

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Engr 1202 ECE LabMicro Planar Antenna Traveler
5
Safety Glasses
Chemical Gloves
Neat, organized work area
Correctly labeled containers
6
  1. Pour 100 ml of Hydrogen Peroxide (H2O2) into a
    crystallizing dish
  2. Carefully add 150 ml of Sulfuric Acid (H2SO4) to
    the Hydrogen Peroxide
  3. This solution is exothermic (creates heat) and
    may start to gently smoke
  4. Carefully place one wafer into the solution. The
    solution will start to bubble, this is due to the
    release of oxygen as the Hydrogen Peroxide is
    reduced to H2O. This is a one time only use
    cleaning solution
  5. This cleaning mixture removes both organic
    material and metallic material
  6. This cleaning solution is known as Piranha
    clean as the rapid bubbling resembles attacking
    piranha.

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Crystallizing dishes marked for sulfuric acid and
hydrogen peroxide are used to clean the wafers
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Place wafer into sulfuric acid/hydrogen peroxide
cleaning mixture using special wafer tweezers
marked with green tape
Cleaning solution of 150 ml sulfuric acid into
100 ml of hydrogen peroxide
Wafer tweezers
Crystallizing dish
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  • After 10 minutes in the sulfuric
    acid/hydrogen peroxide solution the wafers are
    loaded into a wafer carrier and put into the
    cascade DI water rinse for 5 minutes.

Wafer Carrier
Cascade DI water tank
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After the 5 minute DI water rinse, the wafer
carrier is submerse in the 10 HF bath for 10
seconds
HF bath 10 HF - 90 DI water
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After the HF dip, return the wafers to the
cascade rinse tank and rinse in DI water for 15
minutes or 12 mega-ohm resistivity, which ever
comes first.
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After complete DI water rinsing, the wafer
carrier is placed into the wafer dryer to dry the
wafers and complete the cleaning process
Nitrogen valve behind wafer dryer must be turned
on before using
Wafer carrier must be carefully loaded into the
wafer dryer to avoid breaking wafers
Wafer Dryer
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Wafer cleaning successfully completed
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Homework Assignment
  • Assignment 6 worksheet from web site
  • Meet as a team
  • Record members in attendance and time of meeting
  • Decide on application, Cellular, Bluetooth/Wi-Fi,
    RFID
  • Determine frequency band to be used
  • Find wavelength
  • Decide on antenna design length preliminary
    choice, can be changed later
  • Find antenna length
  • Submit ONE worksheet per team at next lecture
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