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Laser control of diluted magnetic semiconductors

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Rashba spin-orbit controls spin orientation. Spin dependent ... Semic. Insulating. Transport. 900 K?? 1996-2003 (DARPA time) (Ga,Sb)Mn, GaP:Mn, GaN:Mn, ZnCrTe ... – PowerPoint PPT presentation

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Title: Laser control of diluted magnetic semiconductors


1
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2
Spintronics and Magnetic Semiconductors
Joaquín Fernández-Rossier, Department of Applied
Physics, University of Alicante (SPAIN)
  • Spintronics
  • Magnetic Semiconductors
  • Ferromagnetism in GaAsMn

Alicante, June 18 2003
3
Spintronics
4
Semiconductors
New exciting physics Quantum Hall
Effects, Conductance Quantization
Dimensional Reduction, Llt?B
Size reduction
Mesoscopic Behavior, Lltls
  • Semiconductors
  • Low carrier density (p, n)
  • Heterostructures
  • Electrical Control of p,n
  • Volatile information

Single electron transistor
5
Metallic Ferromagnets
Size reduction
New Physics GMR Lltlsr
  • Ferromagnetic metals
  • Collective Coordinate
  • Permanent information
  • High carrier density
  • Heterostructures
  • Magnetic Control of current

6
There is plenty of room at the bottom R. P.
Feynman
There is plenty of room at the bottom R. P.
Feynman
7
Alternative Approach Spintronics
  • BUT
  • Spin injection problem
  • Spin scattering problem

8
Spintronics (from the table of contents of
Semiconductor Spintronics and Quantum
Computation
  • Device concepts
  • Interface Physics (spin injection)
  • Spin dynamics, spin decoherence
  • Optical Manipulation
  • Materials

9
Magnetic Semiconductors (materials for
spintronics)
10
History of magnetic semiconductors
11
Ferromagnetism vs Paramagnetism
12
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V
VI
IV
III
B
C
N
O
Al
Si
P
S
II
Ga
Ge
As
Se
III-V Ga-As In-As Ga-Sb
In
Sn
Sb
Te
14
Chemistry of II-VIMn and III-VMn
Electronic configuration of Mn 4s2 3d5
4p0 Electronic configuration of Ga (III) 4s2
3d10 4p1 Electronic configuration of Cd (II)
4s2 3d10 4p0
  • Mn in III-V gives magnetic moment and holes
  • Mn in II-VI gives magnetic moment

15
  • Spin Injection
  • Heterostructures III-V (III,Mn)-V
  • BUT
  • Working at low temperature
  • Small effects
  • Curie Temperature lt 150 Kelvin
  • Magnetic control of transport
  • Electric control of Magnetism

16
Magnetic Semiconductors Summary
  • 2 types (ferro and para)
  • Compatible with semiconductor technology
  • Issue Increase Tc

17
Microscopic mechanism of ferromagnetism
in (III,Mn)-V
18
The mechanism. Experimental evidence
  • II-VIMn PARAMAGNETIC
  • II-VIMnelectrons, PARAMAGNETIC
  • II-VIMn holes FERROMAGNETIC
  • III-VMn FERROMAGNETIC

19
Material Ga(1-x) AsMnx
  • Ferromagnetic below 160 kelvin
  • Homogeneous alloy for xlt0.10
  • Transport p-doped semiconductor (pltcMn)

20
Giant Zeeman Splitting in (II,Mn)-VI
21
4 Exchange Interactions
  • Coulomb Exchange ferromagnetic. (Reduction of
    Coulomb repulsion )
  • Kinetic Exchange Antiferromagnetic

22
The model Hamiltonian
Exchange
Non Magnetic Scattering
GaAs Hamiltonian
Sum over Impurities
23
Carrier mediated ferromagnetism
Functional of carrier density matrix
Entropic Penalty
Paramagnetic gain
24
Model Hamiltonian chemistry
s
EG
d
p
d
p
Holes in Valence Band
No fluctuationin d levels
25
Ab initio chemistry
s
Holes in d levels.
d
Half metal?
p
d
p
Hund Exchange
26
What about this chemistry?
Holes both in d levels and valence band.
s
d
Both Hund and Kinetic exchange
p
d
p
27
Microscopic Mechanism Summary and questions
  • Model Hamiltonian no d-charge fluctuations,
    holes in valence band, kinetic exchange. Weak
    coupling
  • Double Exchange d charge fluctuations. Hund
    exchange. Strong coupling.
  • Who is right? (from ab-initio)
  • Interpolation from DE to KE

28
JFR , in collaboration with
C. Piermarocchi Michigan State
P.C. Chen UC Berkeley
L. J. Sham UCSD
29
Conclusions
  • Spintronics make it happen ideology
  • Magnetic Semiconductors bricks to build
    spintronics
  • FM Mechanism maybe an open problem.
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