332:479 Concepts in VLSI Design Lecture 15 SPICE Simulation

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332479 Concepts in VLSIDesignLecture 15
SPICE Simulation

• David Harris
• Harvey Mudd College
• Spring 2004

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Outline

• Introduction to SPICE
• DC Analysis
• Transient Analysis
• Subcircuits
• Optimization
• Power Measurement
• Logical Effort Characterization
• Summary

Material from CMOS VLSI Design, by Weste and
Harris, Addison-Wesley, 2005
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Introduction to SPICE

• Simulation Program with Integrated Circuit
  Emphasis
• Developed in 1970s at Berkeley
• Many commercial versions are available
• HSPICE is a robust industry standard
• Has many enhancements that we will use
• Written in FORTRAN for punch-card machines
• Circuits elements are called cards
• Complete description is called a SPICE deck

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Writing Spice Decks

• Writing a SPICE deck is like writing a good
  program
• Plan sketch schematic on paper or in editor
• Modify existing decks whenever possible
• Code strive for clarity
• Start with name, email, date, purpose
• Generously comment
• Test
• Predict what results should be
• Compare with actual
• Garbage In, Garbage Out!

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Example RC Circuit
rc.sp David_Harris_at_hmc.edu 2/2/03 Find the
response of RC circuit to rising
input   -----------------------------------------
------- Parameters and models -----------------
------------------------------- .option
post   ------------------------------------------
------ Simulation netlist ---------------------
--------------------------- Vin in gnd pwl 0ps 0
100ps 0 150ps 1.8 800ps 1.8 R1 in out 2k C1 out gn
d 100f   ----------------------------------------
-------- Stimulus -----------------------------
------------------- .tran 20ps 800ps .plot v(in)
v(out) .end
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Result (Textual)
legend a v(in) b v(out)   time
v(in) (ab ) 0. 500.0000m
1.0000 1.5000 2.0000

0. 0.
-2------------------------------------------
------- 20.0000p 0. 2

40.0000p 0. 2
60.0000p 0.
2
80.0000p 0. 2

100.0000p 0. 2
120.0000p
720.000m b a
140.0000p 1.440 b
a
160.0000p 1.800 b
a 180.0000p
1.800 b
a 200.0000p 1.800
-------------b-----------------------------
a------ 220.0000p 1.800
b a
240.0000p 1.800 b
a 260.0000p 1.800
b
a 280.0000p 1.800
b a
300.0000p 1.800
b a 320.0000p
1.800 b
a 340.0000p 1.800
b a
360.0000p 1.800
b a 380.0000p 1.800
b
a 400.0000p 1.800 ----------------
-----------------b---------a------
420.0000p 1.800
b a 440.0000p 1.800
b
a 460.0000p 1.800
b a
480.0000p 1.800
b a 500.0000p 1.800
b
a 520.0000p 1.800
b a
540.0000p 1.800
b a 560.0000p 1.800
b
a 580.0000p 1.800
b a
600.0000p 1.800 --------------------------
--------------b--a------ 620.0000p 1.800
b
a 640.0000p 1.800
b a
660.0000p 1.800
b a 680.0000p 1.800
b
a 700.0000p 1.800
ba
720.0000p 1.800
ba 740.0000p 1.800

ba 760.0000p 1.800
ba
780.0000p 1.800
ba 800.0000p 1.800
-------------------------------------------
ba------

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Result (Graphical)
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Sources

• DC Source
• Vdd vdd gnd 2.5
• Piecewise Linear Source
• Vin in gnd pwl 0ps 0 100ps 0 150ps 1.8 800ps 1.8
• Pulsed Source
• Vck clk gnd PULSE 0 1.8 0ps 100ps 100ps 300ps
  800ps

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SPICE Elements
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Units
Ex 100 femptofarad capacitor 100fF, 100f,
100e-15
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DC Analysis
mosiv.sp   ------------------------------------
------------ Parameters and models ------------
------------------------------------ .include
'../models/tsmc180/models.sp' .temp 70 .option
post   ------------------------------------------
------ Simulation netlist --------------------
---------------------------- nmos Vgs g gnd 0 Vds
d gnd 0 M1 d g gnd gnd NMOS W0.36u L0.18u   --
----------------------------------------------
Stimulus ----------------------------------------
-------- .dc Vds 0 1.8 0.05 SWEEP Vgs 0 1.8
0.3 .end
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I-V Characteristics

• nMOS I-V
• Vgs dependence
• Saturation

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MOSFET Elements

• M element for MOSFET
• Mname drain gate source body type
• Wltwidthgt Lltlengthgt
• ASltarea sourcegt AD ltarea draingt
• PSltperimeter sourcegt PDltperimeter draingt

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Transient Analysis
inv.sp   Parameters and models --------------
---------------------------------- .param
SUPPLY1.8 .option scale90n .include
'../models/tsmc180/models.sp' .temp 70 .option
post   Simulation netlist ---------------------
--------------------------- Vdd vdd gnd 'SUPPLY' V
in a gnd PULSE 0 'SUPPLY' 50ps 0ps 0ps 100ps
200ps M1 y a gnd gnd NMOS W4 L2 AS20 PS18
AD20 PD18 M2 y a vdd vdd PMOS W8 L2 AS40
PS26 AD40 PD26   Stimulus ------------------
------------------------------ .tran 1ps
200ps .end
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Transient Results

• Unloaded inverter
• Overshoot
• Very fast
• edges

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Subcircuits

• Declare common elements as subcircuits
• Ex Fanout-of-4 Inverter Delay
• Reuse inv
• Shaping
• Loading

.subckt inv a y N4 P8 M1 y a gnd gnd NMOS W'N'
L2 AS'N5' PS'2N10' AD'N5'
PD'2N10' M2 y a vdd vdd PMOS W'P' L2
AS'P5' PS'2P10' AD'P5' PD'2P10' .ends
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FO4 Inverter Delay
fo4.sp   Parameters and models --------------
--------------------------------------------------
------ .param SUPPLY1.8 .param H4 .option
scale90n .include '../models/tsmc180/models.sp' .
temp 70 .option post   Subcircuits ------------
--------------------------------------------------
-------- .global vdd gnd .include
'../lib/inv.sp'   Simulation netlist ----------
--------------------------------------------------
---------- Vdd vdd gnd 'SUPPLY' Vin a gnd PULSE 0
'SUPPLY' 0ps 100ps 100ps 500ps 1000ps X1 a b inv
shape input waveform X2 b c inv M'H'
reshape input waveform
.end
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FO4 Inverter Delay (contd.)
X3 c d inv M'H2' device under
test X4 d e inv M'H3' load x5 e f inv M'H4
' load on load   Stimulus -------------------
--------------------------------------------------
- .tran 1ps 1000ps .measure tpdr rising prop
delay TRIG v(c) VAL'SUPPLY/2' FALL1
TARG v(d) VAL'SUPPLY/2' RISE1 .measure
tpdf falling prop delay TRIG v(c)
VAL'SUPPLY/2' RISE1 TARG v(d)
VAL'SUPPLY/2' FALL1 .measure tpd
param'(tpdrtpdf)/2' average prop
delay .measure trise rise time TRIG
v(d) VAL'0.2SUPPLY' RISE1 TARG
v(d) VAL'0.8SUPPLY' RISE1 .measure tfall
fall time TRIG v(d) VAL'0.8SUPPLY'
FALL1 TARG v(d) VAL'0.2SUPPLY' FALL1 .end
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FO4 Results
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Optimization

• HSPICE can automatically adjust parameters
• Seek value that optimizes some measurement
• Example Best P/N ratio
• Weve assumed 21 gives equal rise/fall delays
• But we see rise is actually slower than fall
• What P/N ratio gives equal delays?
• Strategies
• (1) run a bunch of sims with different P size
• (2) let HSPICE optimizer do it for us

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p/n Optimization
fo4opt.sp   Parameters and models -----------
--------------------------------------------------
--------- .param SUPPLY1.8 .option
scale90n .include '../models/tsmc180/models.sp' .
temp 70 .option post   Subcircuits ------------
--------------------------------------------------
-------- .global vdd gnd .include
'../lib/inv.sp' Simulation netlist -----------
--------------------------------------------------
--------- Vdd vdd gnd 'SUPPLY' Vin a gnd PULSE 0
'SUPPLY' 0ps 100ps 100ps 500ps 1000ps X1 a b inv P
'P1' shape input waveform X2 b c inv P'P1' M
4 reshape input X3 c d inv P'P1' M16
device under test
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p/n Optimization
X4 d e inv P'P1' M64 load X5 e f inv P'P1' M
256 load on load   Optimization
setup -------------------------------------------
--------------------------- .param
P1optrange(8,4,16) search from 4 to 16, guess
8 .model optmod opt itropt30 maximum of 30
iterations .measure bestratio param'P1/4'
compute best P/N ratio   Stimulus -------------
--------------------------------------------------
------- .tran 1ps 1000ps SWEEP OPTIMIZEoptrange
RESULTSdiff MODELoptmod .measure tpdr
rising propagation delay TRIG
v(c) VAL'SUPPLY/2' FALL1 TARG v(d)
VAL'SUPPLY/2' RISE1 .measure tpdf falling
propagation delay TRIG v(c)
VAL'SUPPLY/2' RISE1 TARG v(d)
VAL'SUPPLY/2' FALL1 .measure tpd
param'(tpdrtpdf)/2' goal0 average prop
delay .measure diff param'tpdr-tpdf' goal 0
diff between delays .end
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p/n Results

• p/n ratio for equal delay is 3.61
• tpd tpdr tpdf 84 ps (slower than 21 ratio)
• Big pMOS transistors waste power too
• Seldom design for exactly equal delays
• What ratio gives lowest average delay?
• .tran 1ps 1000ps SWEEP OPTIMIZEoptrange
  RESULTStpd MODELoptmod
• p/n ratio of 1.41
• tpdr 87 ps, tpdf 59 ps, tpd 73 ps

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Power Measurement

• HSPICE can measure power
• Instantaneous P(t)
• Or average P over some interval
• .print P(vdd)
• .measure pwr AVG P(vdd) FROM0ns TO10ns
• Power in single gate
• Connect to separate VDD supply
• Be careful about input power

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Logical Effort

• Logical effort can be measured from simulation
• As with FO4 inverter, shape input, load output

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Logical Effort Plots

• Plot tpd vs. h
• Normalize by t
• y-intercept is parasitic delay
• Slope is logical effort
• Delay fits straight line
• very well in any process
• as long as input slope is
• consistent

t 15 ps
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Logical Effort Data

• For NAND gates in TSMC 180 nm process
• Notes
• Parasitic delay is greater for outer input
• Average logical effort is better than estimated

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Comparison
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Summary

• Introduction to SPICE
• DC Analysis
• Transient Analysis
• Subcircuits
• Optimization
• Power Measurement
• Logical Effort Characterization